Diodes FZT603 User Manual
Fzt603
SOT223 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 3 NOVEMBER 1995
FEATURES
* 2A continuous current
* Useful h
FE
up to 6A
* Fast Switching
PARTMARKING DETAIL DEVICE TYPE IN FULL
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
100
V
Collector-Emitter Voltage
V
CEO
80
V
Emitter-Base Voltage
V
EBO
10
V
Peak Pulse Current
I
CM
6
A
Continuous Collector Current
I
C
2
A
Power Dissipation
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
100
240
V
I
C
=100
µ
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
80
110
V
I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
10
16
V
I
E
=100
µ
A
Collector Cut-Off Current
I
CBO
0.01
10
µ
A
µ
A
V
CB
=80V
V
CB
=80V,
T
amb
=100°C
Emitter Cut-Off Current
I
EBO
0.1
µ
A
V
EB
=8V
Collector Cut-Off Current
I
CES
10
µ
A
V
CES
=80V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.79
0.80
0.88
0.99
0.86
0.88
0.90
1.00
1.13
V
V
V
V
V
I
C
=0.25A, I
B
=0.25mA*
I
C
=0.4A, I
B
=0.4mA*
I
C
=1A, I
B
=1mA*
I
C
=2A, I
B
=20mA*
I
C
=2A, I
B
=20mA
FZT603
C
C
E
B
T
j
=150°C
Dim
Millimeters
Inches
Min
Max
Min
Max
A
6.3
6.7
0.248
0.264
B
3.3
3.7
0.130
0.146
C
1.7
0.067
D
0.6
0.8
0.024
0.031
E
2.9
3.1
0.114
0.122
F
0.24
0.32
0.009
0.013
G
NOM 4.6
NOM 0.181
H
0.85
1.05
0.033
0.041
K
0.02
0.10
0.0008
0.004
L
6.7
7.3
0.264
0.287
M
NOM 2.3
NOM 0.0905
PACKAGE OUTLINE DETAILS
FZT603