Diodes FMMT734 - Manual (Page 2)

ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage V
(BR)CBO
-100 -130 V I
C
=-100
µ
A
Collector-Emitter
Breakdown Voltage V
(BR)CEO
-100 -116 V I
C
=-5mA*
Emitter-Base
Breakdown Voltage V
(BR)EBO
-12 -17 V I
E
=-100
µ
A
Collector Cut-Off
Current I
CBO
-10 nA V
CB
=-80V
Emitter Cut-Off
Current I
EBO
-10 nA V
EB
=-7V
Collector Emitter
Cut-Off Current I
CES
-200 nA V
CES
=-80V
Collector-Emitter
Saturation Voltage V
CE(sat)
-0.68
-0.72
-0.78
-0.86
-0.72
-0.90 -0.75
-0.80
-0.86
-0.97
—
-1.05 V
V
V
V
V
V I
C
=-100mA, I
B
=-1mA*
I
C
=-250mA,I
B
=-1mA*
I
C
=-500mA, I
B
=-5mA*
I
C
=-800mA, I
B
=-5mA*
I
C
=-800mA, I
B
=-5mA †*
I
C
=-1A, I
B
=-5mA*
Base-Emitter
Saturation Voltage V
BE(sat)
-1.60 -1.75 V I
C
=-1A, I
B
=-5mA*
Base-Emitter
Turn-On Voltage V
BE(on)
-1.30 -1.75 V I
C
=-1A, V
CE
=-5V*
Static Forward
Current Transfer
Ratio h
FE
20K
15K
5K
60K
60K
50K
15K
150
20K I
C
=-10mA, V
CE
=-5V*
I
C
=-100mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
I
C
=-2A, V
CE
=-5V*
I
C
=-5A, V
CE
=-5V*
I
C
=-1A, V
CE
=-2V*
Transition
Frequency f
T
140 MHz I
C
=-10mA, V
CE
=-10V
f=100MHz
Output Capacitance C
obo
14 25 pF V
CB
=-10V, f=1MHz
Turn-On Time t
(on)
460 ns I
C
=-500mA, V
CC
=-20V
I
B
=
±
1mA
Turn-Off Time t
(off)
1200 ns
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
† T
amb
=150°C
FMMT734