Diodes DDTD (xxxx) U - Manual (Page 2)

DS30382 Rev. 7 - 2 2 of 3
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DDTD (xxxx) U
© Diodes Incorporated
Electrical Characteristics
@T A = 25°C unless otherwise specified
R1, R2 Types
Characteristic Symbol Min Typ Max Unit Test Condition
DDTD113EU
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
DDTD133HU
V
l(off)
0.5
0.5
0.5
0.5
0.5
0.3
0.3
0.3
⎯ ⎯ V V
CC
= 5V, I
O
= 100 μA
Input Voltage
DDTD113EU
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
DDTD133HU
V
l(on)
⎯ ⎯
3.0
3.0
3.0
3.0
3.0
2.0
2.0
2.0
V
V O = 0.3V, I O = 20mA
V O = 0.3V, I O = 20mA
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 10mA
V
O
= 0.3V, I
O
= 30mA
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 20mA
Output Voltage V
O(on)
⎯ ⎯ 0.3V V I
O
/I
l
= 50mA/2.5mA
Input Current
DDTD113EU
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
DDTD133HU
I l
⎯ ⎯
7.2
3.8
1.8
0.88
28
7.2
3.6
2.4
mA V
I = 5V
Output Current I
O(off)
⎯ ⎯ 0.5
μA V
CC
= 50V, V
I
= 0V
DC Current Gain
DDTD113EU
DDTD123EU
DDTD143EU
DDTD114EU
DDTD122JU
DDTD113ZU
DDTD123YU
DDTD133HU
G l
33
39
47
56
47
56
56
56
⎯ ⎯ ⎯ V
O = 5V, I O = 50mA
Gain-Bandwidth Product* f
T
⎯ 200 ⎯ MHz V
CE
= 10V, I
E
= 5mA, f = 100MHz
* Transistor - For Reference Only
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
R1-Only, R2-Only Types
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
50 ⎯ ⎯ V I
C
= 50
μA
Collector-Emitter Breakdown Voltage BV
CEO
40 ⎯ ⎯ V I
C
= 1mA
Emitter-Base Breakdown Voltage DDTD123TU
DDTD143TU
DDTD114TU
DDTD114GU
BV
EBO
5 ⎯ ⎯ V
I
E
= 50 μA
I
E
= 50 μA
I
E
= 50 μA
I E = 720
μA
Collector Cutoff Current I
CBO
⎯ ⎯ 0.5 μA V
CB
= 50V
Emitter Cutoff Current
DDTD123TU
DDTD143TU
DDTD114TU
DDTD114GU
I
EBO
⎯
⎯
⎯
300
⎯
0.5
0.5
0.5
580
μA V
EB
= 4V
Collector-Emitter Saturation Voltage V
CE(sat)
⎯ ⎯ 0.3 V I
C
= 50mA, I
B
= 2.5mA
DC Current Transfer Ratio
DDTD123TU
DDTD143TU
DDTD114TU
DDTD114GU
h
FE
100
100
100
56
250
250
250
⎯
600
600
600
⎯
⎯ I
C
= 5mA, V
CE
= 5V
Gain-Bandwidth Product* f
T
⎯ 200 ⎯ MHz V
CE
= 10V, I
E
= -5mA, f = 100MHz
* Transistor - For Reference Only