Diodes DDTC (R2-ONLY SERIES) E - Manual (Page 2)

Electrical Characteristics
@T
A
= 25°C unless otherwise specified
DS30316 Rev. 8 – 2
2 of 3
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DDTC (R2-ONLY SERIES) E
© Diodes Incorporated
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
50 ⎯ ⎯ V I
C
= 50 μA
Collector-Emitter Breakdown Voltage BV
CEO
50 ⎯ ⎯ V I
C
= 1mA
Emitter-Base Breakdown Voltage BV
EBO
5 ⎯ ⎯ V
I
E
= 720 μA, DDTC114GE
I
E
= 330 μA, DDTC124GE
I
E
= 160 μA, DDTC144GE
I
E
= 72 μA, DDTC115GE
Collector Cutoff Current I
CBO
⎯ ⎯ 0.5 μA V
CB
= 50V
Emitter Cutoff Current
DDTC114GE
DDTC124GE
DDTC144GE
DDTC115GE
I
EBO
300
140
65
30
⎯
580
260
130
58
μA V
EB
= 4V
Collector-Emitter Saturation Voltage V
CE(sat)
⎯ ⎯ 0.3 V I
C
= 10mA, I
B
= 0.5mA
DC Current Transfer Ratio
DDTC114GE
DDTC124GE
DDTC144GE
DDTC115GE
h
FE
30
56
68
82
⎯ ⎯ ⎯ I
C
= 5mA, V
CE
= 5V
Bleeder Resistor (R
2
) Tolerance ΔR
2
-30 ⎯ +30 % ⎯
Gain-Bandwidth Product* f
T
⎯ 250 ⎯ MHz V
CE
= 10V, I
E
= -5mA, f = 100MHz
* Transistor – For Reference Only
TYPICAL CURVES – DDTC114GE
0.001
0.01
0.1
1
0 10 20 30 40 50
V,
M
AX
IM
U
M
C
O
LL
E
C
T
O
R
V
O
LT
A
G
E (
V
)
CE
(S
A
T
)
I , COLLECTOR CURRENT (mA)
Fig. 2 V vs. I
C
CE(SAT) C
I /I = 10
C B
-25 C °
75 C °
25 C °
-50 0 50 100 150
250
200
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Derating Curve
A
°
P
, P
O
WE
R
DI
S
S
IP
A
T
IO
N (
M
IL
LI
W
A
T
T
S)
D
10
1,000
100
1 10
h,
D
100
C
C
U
R
R
EN
T
G
AIN (
N
O
R
MA
LI
Z
E
D
)
FE
I , COLLECTOR CURRENT (mA)
Fig. 3 DC Current Gain
C
V = 10
CE
0
1
2
3
4
0 20 30
C
,
C
A
P
A
C
IT
AN
C
E (
p
F
)
OB
V , REVERSE BIAS VOLTAGE (V)
Fig. 4 Output Capacitance
R
5
10 5 15 25
I = 0mA
E