Diodes DDTC113TLP - Manual (Page 2)

DDTC113TLP
Document number: DS30843 Rev. 8 - 2
2 of 4
www.diodes.com
February 2011
© Diodes Incorporated
DDTC113TLP
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Supply Voltage V
CC
50 V
Input Voltage V
IN
-5 to +10 V
Output Current (I
O
) I
C(MAX)
100 mA
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 4) P
D
250 mW
Power Derating above 25 °C P
der
2 mW /°C
Thermal Resistance, Junction to Ambient Air (Note 4)
(Equivalent to one heated junction of NPN)
R θJA 500 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
BV
CBO
50 ⎯ ⎯ V I
C
= 10
μA, I
E
= 0
Collector-Emitter Breakdown Voltage BV
CEO
50 ⎯ ⎯ V I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage BV EBO
5 ⎯ ⎯ V I E = 50
μA, I
C = 0
Collector-Base Cutoff Current I
CBO
⎯ ⎯ 0.5 μA
V
CB
= 50V, I
E
= 0
Emitter-Base Cutoff Current I
EBO
⎯ ⎯ 0.5 μA V
EB
= 4V, I
C
= 0
ON CHARACTERISTICS (Note 5)
DC Current Gain
h
FE
100 380 600 ⎯
V
CE
= 5V, I
C
= 1mA
Collector-Emitter Saturation Voltage V
CE(sat)
⎯ ⎯ 0.25 V I
C
= 50mA, I
B
= 2.5mA
Input Resistance R1 0.7 1 1.3 K Ω ⎯
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f T
⎯ 250 ⎯ MHz V CE = 10V, I E = 5mA, f = 100MHz
Notes: 4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch
5. Short duration pulse test used to minimize self-heating effect.
P
, P
OW
E
R DIS
S
IP
A
T
ION
(m
W
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 4)
A
R = 500 C/W θJA
°
400
500
600
700
800