Fzt956, Electrical characteristics, A product line of diodes incorporated – Diodes FZT956 User Manual
Page 4
FZT956
Da
tasheet Number: DS36119 Rev. 4 - 2
4 of 7
November 2012
© Diodes Incorporated
FZT956
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ.
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
-220 -300 -
V I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 9)
BV
CER
-220 -300 -
V I
C
= -1µA,
R
B
≤
1k
Ω
Collector-Emitter Breakdown Voltage (Note 9)
BV
CEO
-200 -240 -
V I
C
= -1mA
Emitter-Base Breakdown Voltage
BV
EBO
-7 -8.3 -
V
I
E
= -100µA
Collector Cutoff Current
I
CBO
-
-
-
-
-50
-1
nA
µ
A
V
CB
= -200V
V
CB
= -200V, T
A
= +100°C
Collector Cutoff Current
I
CER
R
≤
1k
Ω
-
-
-
-
-50
-1
nA
µA
V
CB
= -200V
V
CB
= -200V, T
A
= +100°C
Emitter Cutoff Current
I
EBO
- - -10 nA
V
EB
= -6V
DC current transfer Static ratio (Note 9)
h
FE
100 200 -
-
I
C
= -10mA, V
CE
= -5V
100 200 300
I
C
= -1A, V
CE
= -5V
50 150 -
I
C
= -2A, V
CE
= -5V
- 10 -
I
C
= -5A, V
CE
= -5V
Collector-Emitter Saturation Voltage (Note 9)
V
CE(sat)
-
-30
-50
mV
I
C
= -100mA, I
B
= -10mA
-
-120 -165
I
C
= -1A, I
B
= -100mA
-
-168 -275
I
C
= -2A, I
B
= -400mA
Base-Emitter Saturation Voltage (Note 9)
V
BE(sat)
- -970
-1110 mV
I
C
= -2A, I
B
= -400mA
Base-Emitter Turn-on Voltage (Note 9)
V
BE(on)
- -810
-950 mV
I
C
= -2A, V
CE
= -5V
Transitional Frequency (Note 9)
f
T
- 110 - MHz
I
C
= -100mA, V
CE
= -10V,
f = 50MHz
Output capacitance
C
obo
- 32 - pF
V
CB
= -20V, f = 1MHz
Switching Time
t
ON
- 67 -
ns
V
CC
= -50V, I
C
= -1A,
I
B1
= -I
B2
=
-100mA
t
OFF
- 1140 -
Notes:
9. Measured under pulsed conditions. Pulse width
≤ 300μs. Duty cycle ≤ 2%.