Diodes IMX8 User Manual
Imx8, Features, Mechanical data
IMX8
DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
•
Epitaxial Planar Die Construction
•
Complementary PNP Type Available (IMT4)
•
Small Surface Mount Package
•
Lead Free/RoHS Compliant (Note 3)
•
"Green" Device, Note 4 and 5
Mechanical Data
•
Case: SOT-26
•
Case Material: Molded Plastic, "Green" Molding
Compound, Note 5. UL Flammability Classification
Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020C
•
Terminal Connections: See Diagram
•
Terminals: Solderable per MIL-STD-202, Method 208
•
Lead Free Plating (Matte Tin Finish annealed over
Copper leadframe).
•
Marking Information: KX8, See Page 3
•
Ordering & Date Code Information: See Page 3
•
Weight: 0.016 grams (approximate)
SOT-26
Dim
Min
Max
Typ
A
0.35
0.50
0.38
B
1.50
1.70
1.60
C
2.70
3.00
2.80
D
⎯
⎯
0.95
F
⎯
⎯
0.55
H
2.90
3.10
3.00
J
0.013
0.10
0.05
K
1.00
1.30
1.10
L
0.35
0.55
0.40
M
0.10
0.20
0.15
α
0
°
8
°
⎯
All Dimens ons in mm
i
A
M
J
L
D
F
B C
H
K
B
2
B
1
E
1
C
2
E
2
C
1
B
2
B
1
E
1
C
2
E
2
C
1
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
120
V
Collector-Emitter Voltage
V
CEO
120
V
Emitter-Base Voltage
V
EBO
5.0
V
Collector Current - Continuous
I
C
50
mA
Power Dissipation (Note 1)
P
d
300
mW
Thermal Resistance, Junction to Ambient (Note 1)
R
θJA
417
°C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Collector-Base Breakdown Voltage
V
(BR)CBO
120
⎯
⎯
V
I
C
= 50
μA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
120
⎯
⎯
V
I
C
= 1.0mA
Emitter-Base Breakdown Voltage
V
(BR)EBO
5.0
⎯
⎯
V
I
E
= 50
μA
Collector Cutoff Current
I
CBO
⎯
⎯
0.5
μA
V
CB
= 100V
Emitter Cutoff Current
I
EBO
⎯
⎯
0.5
μA
V
EB
= 4.0V
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
180
⎯
820
⎯
I
C
= 2.0mA, V
CE
= 6.0V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
⎯
0.5
V
I
C
= 10mA, I
B
= 1.0mA
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
⎯
140
⎯
MHz
V
CE
= 12V, I
C
= 2.0mA,
f = 100MHz
Notes:
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf. 200mW per element must not be exceeded.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30304 Rev. 8 - 2
1 of 3
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