Fzt955, Electrical characteristics, A product line of diodes incorporated – Diodes FZT955 User Manual
Page 4
FZT955
Da
tasheet Number: DS33190 Rev. 4 - 2
4 of 7
November 2012
© Diodes Incorporated
FZT955
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ.
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
-180 -210 -
V I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 8)
BV
CER
-180 -210 -
V I
C
= -1µA,
R
B
≤
1kΩ
Collector-Emitter Breakdown Voltage (Note 8)
BV
CEO
-140 -170 -
V I
C
= -1mA
Emitter-Base Breakdown Voltage
BV
EBO
-7 -8 - V
I
E
= -100µA
Collector Cutoff Current
I
CBO
-
-
<1
-
-50
-1
nA
µ
A
V
CB
= -150V
V
CB
= -150V, T
A
= +100°C
Collector Cutoff Current
I
CER
R
≤
1kΩ
-
-
<1
-
-50
-1
nA
µA
V
CB
= -150V
V
CB
= -150V, T
A
= +100°C
Emitter Cutoff Current
I
EBO
- - -10 nA
V
EB
= -6V
DC current transfer Static ratio (Note 8)
h
FE
100 200 -
-
I
C
= -10mA, V
CE
= -5V
100 200 300
I
C
= -1A, V
CE
= -5V
75 140 -
I
C
= -3A, V
CE
= -5V
- 10 -
I
C
= -10A, V
CE
= -5V
Collector-Emitter Saturation Voltage (Note 8)
V
CE(sat)
-
-30
-60
mV
I
C
= -100mA, I
B
= -5mA
-
-70 -120
I
C
= -500mA, I
B
= -50mA
-
-110 -150
I
C
= -1A, I
B
= -100mA
-
-275 -370
I
C
= -3A, I
B
= -300mA
Base-Emitter Saturation Voltage (Note 8)
V
BE(sat)
- -970
-1110 mV
I
C
= -3A, I
B
= -300mA
Base-Emitter Turn-on Voltage (Note 8)
V
BE(on)
- -830
-950 mV
I
C
= -3A, V
CE
= -5V
Transitional Frequency (Note 8)
f
T
- 110 - MHz
I
C
= -100mA, V
CE
= -10V,
f = 50MHz
Output capacitance
C
obo
- 40 - pF
V
CB
= -20V, f = 1MHz
Switching Time
t
ON
- 68 -
ns
V
CC
= -50V, I
C
= -1A,
I
B1
= -I
B2
=
-100mA
t
OFF
- 1030 -
Notes:
8. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.