Electrical characteristics, Fzt857, A product line of diodes incorporated – Diodes FZT857 User Manual
Page 4
FZT857
Document Number DS33177 Rev. 6 - 2
4 of 7
February 2013
© Diodes Incorporated
FZT857
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
350 475
V
I
C
= 100µA
Collector-Emitter Breakdown Voltage
BV
CER
350 475
V
I
C
= 1µA, R
B
≤
1kΩ
Collector-Emitter Breakdown Voltage (Note 10)
BV
CEO
300 350
V
I
C
= 1mA
Emitter-Base Breakdown Voltage
BV
EBO
7 8
V
I
E
= 100µA
Collector Cut-off Current
I
CBO
<1
50
1
nA
µA
V
CB
= 300V
V
CB
= 300V, T
A
= +100°C
Collector Cut-off Current
I
CER
<1
50
1
nA
µA
V
CB
= 300V, R
B
≤
1kΩ
V
CB
= 300V, T
A
= +100°C
Emitter Cut-off Current
I
EBO
<1
10 nA
V
EB
= 6V
DC Current Gain (Note 10)
h
FE
100 200
I
C
= 10mA, V
CE
= 5V
100 200 300
I
C
= 500mA, V
CE
= 10V
15 25
I
C
= 2A, V
CE
= 10V
15
I
C
= 3A, V
CE
= 10V
Collector-Emitter Saturation Voltage (Note 10)
V
CE(sat)
59 100
mV
I
C
= 500mA, I
B
= 50mA
95 155
I
C
= 1A, I
B
= 100mA
180 230
I
C
= 2A, I
B
= 200mA
300 345
I
C
= 3.5A, I
B
= 600mA
Base-Emitter Saturation Voltage (Note 10)
V
BE(sat)
1020 1250 mV I
C
= 3.5A, I
B
= 600mA
Base-Emitter Turn-On Voltage (Note 10)
V
BE(on)
940 1120 mV I
C
= 3.5A, V
CE
= 10V
Current Gain-Bandwidth Product (Note 10)
f
T
80
MHz
I
C
= 100mA, V
CE
= 10V,
f = 50MHz
Output Capacitance (Note 10)
C
obo
21
pF
V
CB
= 20V, f = 1MHz
Switching Times
t
on
100
ns
I
C
= 250mA, V
CC
= 50V,
I
B1
= -I
B2
= 25mA
t
off
5300
Note:
10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%