Diodes FZT658 - Manual (Page 2)

FZT658
Document Number DS33153 Rev. 5 - 2
2 of 7
www.diodes.com
May 2013
© Diodes Incorporated
FZT658
A Product Line of
Diodes Incorporated
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
400 V
Collector-Emitter Voltage V CEO
400 V
Emitter-Base Voltage V
EBO
7 V
Continuous Collector Current I
C
0.5 A
Peak Pulse Current I CM
1 A
Thermal Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
(Note 5)
P
D
2 W
(Note 6) 3 W
Thermal Resistance, Junction to Ambient
(Note 5)
R
• JA
62.5 °C/W
(Note 6) 41.7 °C/W
Thermal Resistance, Junction to Leads (Note 7) R
• JL
12.93 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
ESD Ratings
(Note 8)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM • 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM • 400 V C
Notes: 5. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; device measured when
operating in steady state condition.
6. Same as note (5), except the device is mounted on 50mm X 50mm single sided 2oz weight copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.