Diodes FZT796A - Manual

SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* 200 Volt V
CEO
* Gain of 250 at I
C
=0.3 Amps
* Very low saturation voltage
APPLICATIONS
* Battery powered circuits
COMPLEMENTARY TYPE -
FZT696B
PARTMARKING DETAIL - FZT796A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-200 V
Collector-Emitter Voltage V
CEO
-200 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-1 A
Continuous Collector Current I
C
-0.5 A
Power Dissipation at T
amb
=25°C P
tot
2 W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T amb = 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltage
Collector-Base
Collector-Emitter
V
(BR)CBO
-200 V I
C
=-100 µ A
V
(BR)CEO
-200 V I
C
=-10mA*
Emitter-Base V
(BR)EBO
-5 V I
E
=-100 µ A
Collector Cut-Off Current I
CBO
-0.1 µ A V
CB
=-150V
Emitter Cut-Off Current I
EBO
-0.1 µ A V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.2
-0.3
-0.3
V
V
V
I
C
=-50mA, I
B
=-2mA*
I
C
=-100mA, I
B
=-5mA*
I
C
=-200mA, I
B
=-20mA*
Base-EmitterSaturationVoltage V
BE(sat)
-0.95 V I
C
=-200mA,I
B
=-20mA*
Base-EmitterTurn-OnVoltage V
BE(on)
-0.67 V I
C
=-200mA,V
CE
=-10V*
Static Forward Current
Transfer Ratio
h
FE
300
300
250
100
800 I
C
=-10mA, V
CE
=-10V*
I
C
=-100mA, V
CE
=-10V*
I
C
=-300mA, V
CE
=-10V*
I
C
=-400mA, V
CE
=-10V*
Transition Frequency f
T
100 MHz I
C
=-50mA, V
CE
=-5V
f=50MHz
Input Capacitance C
ibo
225 pF V
EB
=-0.5V, f=1MHz
Output Capacitance C
obo
12 pF V
CB
=-10V, f=1MHz
Switching Times t
on
t
off
100
3200
ns
ns
I
C
=-100mA, I
B1
=-10mA
I
B2
=-10mA, V
CC
=-50V
*Measured under pulsed conditions. Pulse width=300 µ s. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
FZT796A FZT796A
C
C
E
B
3 - 256 3 - 255
0.01 0.1 1 10
0.8
0.6
0
1.6
0.01 0.1 1 10
0.01 0.1 1 10
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
0.01 0.1 1 10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
I C - Collector Current (Amps)
V
- (V
ol
ts)
I + - Collector Current (Amps)
V
- (
Vo
lts)
I + - Collector Current (Amps) I + - Collector Current (Amps)
I + - Collector Current (Amps)
h
- No
rmal
ise
d
G
ain
V
- (
Vo
lts)
750
500
250
h
- T
yp
ic
al Gai
n
T amb =25°C -55°C
+25°C
+100°C
+175°C
0
+100°C
+25°C
-55°C
0.01 0.1 1 10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
V
- (
Vol
ts)
-55°C
+25°C
+100°C
+175°C
1.8
1.4
1.2
1.0
0.4
0.2
0.8
0.6
0
1.6
1.8
1.4
1.2
1.0
0.4
0.2
-55°C
+25°C
+100°C
0.001
I C /I B =10
I C /I B =40
I C /I B =20
0.001
I C /I B =20
V CE =10V
V CE =10V
I C /I B =10
TYPICAL CHARACTERISTICS
I +
-Col
lector C
ur
rent
(A
)
Safe Operating Area
V CE - Collector Emitter Voltage (V)
1
0.1
10 100
1s
DC
100ms
10ms
100 µ s
1ms
1
0.01
1000
0.001