Diodes FZT755 - Manual

SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 5 – MARCH 2005
FEATURES
* 150 Volt V
CEO
* Low saturation voltage
* Excellent h
FE
specified up to 1A (pulsed).
COMPLEMENTARY TYPE – FZT655
PARTMARKING DETAIL – FZT755
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-150 V
Collector-Emitter Voltage V
CEO
-150 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-2 A
Continuous Collector Current I
C
-1 A
Power Dissipation at T
amb
=25°C P
tot
2 W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
C o l l e c t o r - B a s e
Breakdown Voltage V
(BR)CBO
-150 V I
C
=-100 µA
C o l l e c t o r - E m i t t e r
Breakdown Voltage V
(BR)CEO
-150 V I
C
=-10mA*
Emitter-Base
Breakdown Voltage V
(BR)EBO
-5 V I
E
=-100 µA
Collector Cut-Off Current I
CBO
-0.1 µA V
CB
=-125V
Emitter Cut-Off Current I
EBO
-0.1 µA V
EB
=-3V
C o l l e c t o r - E m i t t e r
Saturation Voltage V
CE(sat)
-0.5
-0.5 V
V I
C
=-500mA, I
B
=-50mA*
I
C
=-1A, I
B
=-200mA*
Base-Emitter
Saturation Voltage V
BE(sat)
-1.1 V I
C
=-500mA, I
B
=-50mA*
Base-Emitter
Turn-On Voltage V
BE(on)
-1.0 V I
C
=-500mA, V
CE
=-5V*
Static Forward Current
Transfer Ratio h
FE
50
50
20
300
I
C
=-10mA, V
CE
=-5V*
I
C
=-500mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
Transition Frequency f
T
30 MHz I
C
= - 1 0 m A , V
CE
=-20V
f=20MHz
Output Capacitance C
obo
20 pF V
CB
=-10V f=1MHz
*Measured under pulsed conditions. Pulse Width=300 µs. Duty cycle ≤2%
C
C
E
B
FZT755
TBA