Diodes FZT694B - Manual

SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* High V
CEO
/ Very Low Saturation Voltage
* Gain of 400 at I
C
=200mA
APPLICATIONS
* Darlington replacement
* Relay / solenoid driver
PARTMARKING DETAIL -
FZT694B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
120 V
Collector-Emitter Voltage V
CEO
120 V
Emitter-Base Voltage V
EBO
5 V
Peak Pulse Current I
CM
2 A
Continuous Collector Current I
C
1 A
Power Dissipation T
amb
=25°C P
tot
2 W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages V
(BR)CBO
120 V I
C
=100 µ A
V
(BR)CEO
120 V I
C
=10mA*
V
(BR)EBO
5 V I
E
=100 µ A
Collector Cut-Off Current I
CBO
0.1 µ A V
CB
=100V
Emitter Cut-Off Current I
EBO
0.1 µ A V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.25
0.5
V
V
I
C
=100mA, I
B
=0.5mA*
I
C
=400mA, I
B
=5mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.9 V I
C
=1A, I
B
=10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
0.9 V I
C
=1A, V
CE
=2V*
Static Forward
Current Transfer
Ratio
h
FE
500
400
150
I
C
=100mA, V
CE
=2V
*
I
C
=200mA, V
CE
=2V*
I
C
=400mA, V
CE
=2V*
Transition Frequency f
T
130 MHz I
C
=50mA, V
CE
=5V
f=50MHz
Input Capacitance C
ibo
200 pF V
EB
=0.5V, f=1MHz
Output Capacitance C
obo
9 pF V
CB
=10V, f=1MHz
Switching Times t
on
t
off
80
2900
ns
ns
I
C
=100mA, I
B!
=10mA
I
B2
=10mA, V
CC
=50V
*Measured under pulsed conditions. Pulse width=300 µ s. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
FZT694B FZT694B
C
C
E
B
3 - 226 3 - 225
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
0.01 0.1 1 10
0.4
0.2
0
0.8
0.6
0.01 0.1 1 10
0.4
0.2
0
0.8
0.6
0.01 0.1 1 10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 1 10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 1 10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V CE(sat) v I C
I + - Collector Current (Amps)
V
- (V
ol
ts
)
V CE(sat) v I C
I + - Collector Current (Amps)
V
- (V
ol
ts
)
I + - Collector Current (Amps) I + - Collector Current (Amps)
h FE v I C V BE(sat) v I C
I + - Collector Current (Amps)
V BE(on) v I C
h
- No
rm
al
ise
d Ga
in
V
- (V
ol
ts
)
V
- (V
ol
ts
)
V CE =2V
V CE =2V
1.5K
1K
500
h
- T
yp
ica
l Ga
in
T amb =25°C
I C /I B =100 -55°C
+25°C
+100°C
+175°C
0
0
-55°C
+25°C
+100°C
+175°C
I C /I B =100
I C /I B =10
I C /I B =200
I C /I B =100
1
0.1
Safe Operating Area
V CE - Collector Emitter Voltage (V)
10 100
1s
DC
100ms
10ms
100us
1ms
1
0.01
1000
10