Electrical characteristics, Fzt655, A product line of diodes incorporated – Diodes FZT655 User Manual
Page 4
FZT655
Document Number DS33151 Rev. 4 - 2
4 of 7
December 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FZT655
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
150
−
−
V
I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 9)
BV
CEO
150
−
−
V
I
C
= 1mA
Emitter-Base Breakdown Voltage
BV
EBO
7 8.1
−
V
I
E
= 100µA
Collector Cut-off Current
I
CBO
−
<10
100 nA
V
CB
= 125V
Emitter Cut-off Current
I
EBO
−
<10
100 nA
V
EB
= 5.6V
Collector-Emitter Saturation Voltage (Note 9)
V
CE(sat)
−
120
500
mV
I
C
= 500mA, I
B
= 50mA
−
180 500
I
C
= 1A, I
B
= 200mA
Base-Emitter Saturation Voltage (Note 9)
V
BE(sat)
−
0.85 1.1
V I
C
= 500mA, I
B
= 50mA
Base-Emitter Turn-On Voltage (Note 9)
V
BE(on)
−
0.74 1.0
V I
C
= 500mA, V
CE
= 5V
DC Current Gain (Note 9)
h
FE
50 85
−
−
I
C
= 10mA, V
CE
= 5V
50 100 300
I
C
= 500mA, V
CE
= 5V
20 50
−
I
C
= 1A, V
CE
= 5V
Current Gain-Bandwidth Product
f
T
30
−
−
MHz
V
CE
= 20V, I
C
= 10mA,
f = 20MHz
Output Capacitance (Note 9)
C
obo
−
−
20 pF
V
CB
= 10V, f = 1MHz
Notes:
9. Measured under pulsed conditions. Pulse width
≤ 300µs. Duty cycle ≤ 2%