Diodes FZT657 User Manual
Fzt657, Sot223 npn silicon planar medium power transistor, Typical characteristics
SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 FEBRUARY 1995
FEATURES
* Low saturation voltage
COMPLEMENTARY TYPE - FZT757
PARTMARKING DETAIL - FZT657
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
300
V
Collector-Emitter Voltage
V
CEO
300
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
1
A
Continuous Collector Current
I
C
0.5
A
Power Dissipation at T
amb
=25°C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
300
V
I
C
=100
µ
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
300
V
I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5
V
I
E
=100
µ
A
Collector Cut-Off Current I
CBO
0.1
µ
A
V
CB
=200V
Emitter Cut-Off Current
I
EBO
0.1
µ
A
V
EB
=3V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.5
V
I
C
=100mA, I
B
=10mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.0
V
I
C
=100mA, I
B
=10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
1.0
V
I
C
=100mA, V
CE
=5V*
Static Forward Current
Transfer Ratio
h
FE
40
50
I
C
=10mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
Transition Frequency
f
T
30
MHz
I
C
=10mA, V
CE
=20V
f=20MHz
Output Capacitance
C
obo
20
pF
V
CB
=20V, f=1MHz
*Measured under pulsed conditions. Pulse Width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
FZT657
FZT657
C
C
E
B
3 - 214
3 - 213
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (
Vo
lts
)
Single Pulse Test at T
amb
=25°C
0.01
0.1
10
1
I
+
-
Collector Current (Amps)
V
BE(sat)
v I
C
V
- (
Vo
lts
)
I
C
/I
B
=10
I
+
-
Collector Current (Amps)
h
FE
v I
C
h
- No
rm
al
ise
d G
ai
n
(%
)
0.01
10
0.1
1
V
CE
=5V
0.01
10
0.1
1
0.6
0.8
1.0
1.2
I
C
/I
B
=10
0.4
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
V
- (
Vol
ts
)
Switching Speeds
I
+
-
Collector Current (Amps)
S
w
itc
hi
ng t
im
e
0.1
1
I
B1
=I
B2
=I
C
/10
0.01
ts
tf
td
tr
1.2
1.4
0
ts
µs
2
1
3
td
tr
tf
µs
0.6
0.4
0.2
0.8
1.0
40
60
80
100
20
0
0.01
10
0.1
1
0.6
0.8
1.0
1.2
0.4
V
CE
=5V
V
CE
=10V
0.4
0.6
0.8
1.0
0.2
0
1.4
1.6
1.2
1.8
0
1
1000
100ms
10ms
1
DC
0.001
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
1ms
300
µ
s
10
100
0.01
0.1