Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes FMMT6520 User Manual
Page 2: Fmmt6520, A product line of diodes incorporated
FMMT6520
Document Number: DS33123 Rev. 3 - 2
2 of 4
August 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FMMT6520
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Collector-Base Voltage
V
CBO
-350 V
Collector-Emitter Voltage
V
CEO
-350 V
Emitter-Base Voltage
V
EBO
-5 V
Continuous Collector Current
I
C
-500 mA
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Power Dissipation
(Note 4)
P
D
330
mW
Thermal Resistance, Junction to Ambient
(Note 4)
R
θJA
379
°C/W
Thermal Resistance, Junction to Lead
(Note 5)
R
θJL
350
°C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Notes:
4. For a device surface mounted FR4 PCB with minimum recommended pad layout; high coverage of single sided 1 oz copper, in still air conditions; the
device is measured when operating in a steady-state condition.
5. Thermal resistance from junction to solder-point (at the end of the collector lead).
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
-350
V
I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 6)
BV
CEO
-350
V
I
C
= -1mA
Emitter-Base Breakdown Voltage
BV
EBO
-5 V
I
E
= -10µA
Collector Cutoff Current
I
CBO
-50
nA
V
CB
= -250V
Emitter Cutoff Current
I
EBO
-50
nA
V
EB
= -3V
Static Forward Current Transfer Ratio
(Note 6)
h
FE
20
30
30
20
15
200
200
I
C
= -1mA, V
CE
= -10V
I
C
= -10mA, V
CE
= -10V
I
C
= -30mA, V
CE
= -10V
I
C
= -50mA, V
CE
= -10V
I
C
= -100mA, V
CE
= -10V
Collector-Emitter Saturation Voltage
(Note 6)
V
CE(sat)
-300
-350
-500
-1000
mV
mV
mV
mV
I
C
=- 10mA, I
B
= -1mA
I
C
=- 20mA, I
B
= -2mA
I
C
= -30mA, I
B
= -3mA
I
C
= -50mA, I
B
= -5mA
Base-Emitter Saturation Voltage(Note 6)
V
BE(sat)
-750
-850
-900
mV
I
C
= -10mA, I
B
= -1mA
I
C
= -20mA, I
B
= -2mA
I
C
= -30mA, I
B
= -3mA
Base-Emitter Turn-On Voltage(Note 6)
V
BE(on)
-2.0
V
I
C
= -100mA, V
CE
= -10V
Output Capacitance
C
obo
6 pF
V
CB
= -20V, f = 1MHz
Transition Frequency
f
T
50 MHz
V
CE
= -20V, I
C
= -10mA,
f = 20MHz
Note: 6.
Measured under pulsed conditions. Pulse width
≤
300
µs. Duty cycle
≤ 2%