Diodes FMMT596 - Manual (Page 2)

FMMT596
Issue 4 - July 2007 2 www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (T
amb
= 25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage V
(BR)CBO
-220 V I
C
=-100
␮A
Collector-emitter breakdown
voltage V
(BR)CEO
-200 V I
C
=-10mA (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300 ␮s. Duty cycle Յ2%.
Emitter-base breakdown
voltage V
(BR)EBO
-5 V I
E
=-100
␮A
Collector cut-off current I
CBO
-100 nA V
CB
=-200V
Emitter cut-off current I
EBO
-100 nA V
EB
=-4V
Collector-emitter cut-off
current I
CES
-100 nA V
CES
=-200V
Collector-emitter saturation
voltage V
CE(sat)
-0.2
-0.35
V
V I
C
=-100mA, I
B
=-10mA,
I
B
=-250mA,
I
B
=-25mA (*)
Base-emitter saturation
voltage V
BE(sat)
-1.0 V I
C
=-250mA, I
B
=-25mA (*)
Base-emitter turn-on voltage V
BE(on)
-0.9 V I
C
=-250mA,
V
CE
=-10V (*)
Static forward current
transfer ratio h
FE
100 I
C
=-1mA, V
CE
=-10V
100 I
C
=-100mA, V
CE
=-10V (*)
85 300 I
C
=-250mA, V
CE
=-10V (*)
35 I
C
=-400mA, V
CE
=-10V (*)
Transition frequency f
T
150 MHz I
C
=-50mA, V
CE
=-10V,
f=100MHz
Output capacitance C
obo
10 pF V
CB
=-10V, f=1MHz
Switching times td 22 ns I
C
=-200mA, V
CC
=-80V
I
b1
=I
b2
=-20mA tr 19
ts 472
tf 70
Switching times td 44 ns I
C
=-100mA, V
CC
=-80V
I
b1
=I
b2
=-10mA
tr 31
ts 665
tf 76