Diodes FMMT497 - Manual (Page 2)

FMMT497
Issue 4 - November 2006 2 www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max
.
Unit Conditions
Collector-base
breakdown voltage V
(BR)CBO
300 V I
C
= 100
␮A
Collector-emitter
breakdown voltage V
CEO(sus)
300 V I
C
= 10mA (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300 ␮s. Duty cycle Յ2%.
Emitter-base
breakdown voltage V
(BR)EBO
5 V I
E
= 100 ␮A
Collector cut-off current I
CBO
100 nA V
CB
= 250V
Collector cut-off current I
CES
100 nA V
CES
= 250V
Emitter cut-off current I
EBO
100 nA V
EB
= 4V
Collector-emitter
saturation voltage V
CE(sat)
0.2
0.3 V
V I
C
= 100mA, I
B
= 10mA
I
C
= 250mA, I
B
= 25mA
Base-emitter
saturation voltage V
BE(sat)
1.0 V I
C
= 250mA, I
B
= 25mA
Base-emitter
turn on voltage V
BE(on)
1.0 V I
C
= 250mA, V
CE
= 10V
Static forward current
transfer ratio h
FE
100
80
20 300
I
C
= 1mA, V
CE
= 10V
I
C
= 100mA, V
CE
= 10V (*)
I
C
= 250mA, V
CE
= 10V (*)
Transition frequency f
T
75 MHz I
C
= 50mA, V
CE
= 10V
f = 100MHz
output capacitance C
obo
5 pF V
CB
= 10V, f = 1MHz
Switching performance td 53 ns V
CC
= 100V, I
C
= 100mA,
Ib1 = -Ib2 = 10mA
tr 126 ns
ts 2.58
␮s
tf 228 ns