Electrical characteristics, Fmmt459q, A product line of diodes incorporated – Diodes FMMT459Q User Manual
Page 4
FMMT459Q
Document number: DS37019 Rev. 1 - 2
4 of 7
March 2014
© Diodes Incorporated
FMMT459Q
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
500 700 — V
I
C
= 100µA
Collector-Emitter Breakdown Voltage
BV
CEV
500 700 — V
I
C
= 10µA; 0.3V > V
BE
> -1V
Collector-Emitter Breakdown Voltage (Note 10)
BV
CEO
450 500 — V
I
C
= 1mA
Emitter-Base Breakdown Voltage
BV
EBO
7 8.1 — V
I
E
= 100µA
Emitter-Base Breakdown Voltage (Reverse Blocking)
BV
ECV
6 8.1 — V
I
C
= 1µA; 0.3V > V
BC
> -6V
Collector Cutoff Current
I
CBO
— <10 100 nA
V
CB
= 450V
Emitter Cutoff Current
I
EBO
— <10 100 nA
V
EB
= 5.6V
Collector Emitter Cutoff Current
I
CES
— <10 100 nA
V
CE
= 450V
Static Forward Current Transfer Ratio (Note 10)
h
FE
50
—
120
70
—
—
—
I
C
= 30mA, V
CE
= 10V
I
C
= 50mA, V
CE
= 10V
Collector-Emitter Saturation Voltage (Note 10)
V
CE(sat)
—
—
60
70
75
90
mV
mV
I
C
= 20mA, I
B
= 2mA
I
C
= 50mA, I
B
= 6mA
Base-Emitter Turn-On Voltage (Note 10)
V
BE(on)
— 0.71 0.9 V
I
C
= 50mA, V
CE
= 10V
Base-Emitter Saturation Voltage (Note 10)
V
BE(sat)
— 0.76 0.9 V
I
C
= 50mA, I
B
= 5mA
Output Capacitance
C
obo
— — 5 pF
V
CB
= 20V, f = 1MHz
Transition Frequency
f
T
50 — — MHz
V
CE
= 20V, I
C
= 10mA,
f = 20MHz
Turn-On Time
t
on
— 113 — ns
V
C
= 100V, I
C
= 50mA
I
B1
= 5mA, I
B2
= -10mA
Turn-Off Time
t
off
— 3450 — ns
Notes:
10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.