Diodes FCX555 - Manual (Page 4)

FCX555
Da
tasheet Number: DS33058 Rev. 2 - 2
4 of 7
www.diodes.com
June 2013
© Diodes Incorporated
FCX555
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
-180 — — V I
C
= -100µA
Collector-Emitter Breakdown Voltage BV
CEV
-180 — — V I
C
= -1µA, -0.3V < V
BE
< 1V
Collector-Emitter Breakdown Voltage BV
CER
-180 — — V I C = -1µA, R B
≤ 1kΩ
Collector-Emitter Breakdown Voltage (Note 10) BV
CEO
-150 — — V I
C
= -1mA
Emitter-Base Breakdown Voltage BV
EBO
-7 -8.1 — V I
E
= -100µA
Collector Cutoff Current I
CBO
—
— <1
-
-20
-10 nA
µA V CB = -144V
V
CB
= -144V, T
A
= +100°C
Emitter Cutoff Current I EBO
— <1 -20 nA V EB = -6V
DC current transfer Static ratio (Note 10) h
FE
100
100
—
—
300
—
I
C
= -10mA, V
CE
= -5V
I
C
= -100mA, V
CE
= -5V
Collector-Emitter Saturation Voltage (Note 10) V
CE(sat)
—
— —
— -300
-400
mV
I
C
= -100mA, I
B
= -10mA
I
C
= -250mA, I
B
= -25mA
Base-Emitter Saturation Voltage (Note 10) V
BE(sat)
— — -1000 mV I
C
= -250mA, I
B
= -25mA
Base-Emitter Turn-on Voltage (Note 10) V
BE(on)
— — -950 mV I
C
= -250mA, V
CE
= -5V
Transitional Frequency f
T
— 100 — MHz
I
E
= -50mA, V
CE
= -10V
f = 100MHz
Output capacitance C
obo
— — 10 pF V
CB
= -10V, f = 1MHz,
Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.