Diodes FCX658A - Manual (Page 2)

ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage V
(BR)CBO
400 480 V I
C
=100 µ A
Collector-Emitter
Breakdown Voltage V
(BR)CEO)
400 465 V I
C
=10mA*
Emitter-Base
Breakdown Voltage V
(BR)EBO
5 7.8 V I
E
=100
µ
A
Collector Cut-Off
Current I
CBO
100 nA V
CB
=320V
Collector Cut-Off
Current I
CES
100 nA V
CE
=320V
Emitter Cut-Off
Current I
EBO
100 nA V
EB
=4V
Collector-Emitter
Saturation Voltage V
CE(sat)
0.165
0.125
0.2 V
V
V I
C
=20mA, I
B
=1mA
I
C
=50mA, I
B
=5mA*
I
C
=100mA,
I
B
=10mA*
Base-Emitter
Saturation Voltage V
BE(sat)
0.75 0.85 V I
C
=100mA,
I
B
=10mA*
Base-Emitter
Turn On Voltage V
BE(on)
0.70 0.85 V IC=100mA, V
CE
=5V*
Static Forward
Current Transfer
Ratio h
FE
85
100
55
35 150
170
130
90 I
C
=1mA, V
CE
=5V*
I
C
=10mA, V
CE
=10V*
I
C
=100mA, V
CE
=5V*
I
C
=200mA, V
CE
=10V*
Transition
Frequency f
T
50 MHz I
C
=20mA, V
CE
=20V
f=20MHz
Output Capacitance C
obo
10 pF V
CB
=20V, f=1MHz
Switching times t
on
t
off
130
3300 ns
ns I
C
=100mA, V
C
=100V
I
B1
=10mA,
I
B2
=-20mA
* Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
NB
For high voltage applications the appropriate industry sector PCB guidelines should be
considered with regard to voltage spacing between conductors.
FCX658A