Diodes DXTA42 User Manual
Dxta42, Features, Mechanical data
DXTA42
Document number: DS31158 Rev. 4 - 2
1 of 4
December 2009
© Diodes Incorporated
DXTA42
NPN SURFACE MOUNT TRANSISTOR
Features
•
Epitaxial Planar Die Construction
•
Complementary PNP Type Available (DXTA92)
•
Ideally Suited for Automated Assembly Processes
•
Ideal for Medium Power Switching or Amplification Applications
•
Lead Free By Design/RoHS Compliant (Note 1)
•
"Green" Device (Note 2)
Mechanical Data
• Case:
SOT89-3L
•
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020C
•
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
•
Marking & Type Code Information: See Page 3
•
Ordering Information: See Page 3
•
Weight: 54.8mg (approximate)
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Collector-Base Voltage
V
CBO
300 V
Collector-Emitter Voltage
V
CEO
300 V
Emitter-Base Voltage
V
EBO
6 V
Continuous Collector Current
I
C
500 mA
Thermal Characteristics
Characteristic Symbol
Value
Unit
Power Dissipation (Note 3) @ T
A
= 25°C
P
D
1 W
Thermal Resistance, Junction to Ambient (Note 3)
R
θJA
125 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol Min Typ Max Unit
Test
Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V
(BR)CBO
300
⎯
⎯
V
I
C
= 100
μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
300
⎯
⎯
V
I
C
= 1mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
6
⎯
⎯
V
I
E
= 100
μA, I
C
= 0
Collector Cut-off Current
I
CBO
⎯
⎯
0.1
μA V
CB
= 200V, I
E
= 0
Emitter Cut-off Current
I
EBO
⎯
⎯
0.1
μA V
EB
= 6V, I
C
= 0
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
⎯
0.5 V
I
C
= 20mA, I
B
= 2mA
Base-Emitter Saturation Voltage
V
BE(SAT)
⎯
⎯
0.9 V
I
C
= 20mA, I
B
= 2mA
Static Forward Current Transfer Ratio
h
FE
25
40
40
⎯
⎯
⎯
I
C
= 1mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V
I
C
= 30mA, V
CE
= 10V
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
f
T
50
⎯
⎯
MHz
I
C
= 10mA, V
CE
= 20V,
f = 100MHz
Output Capacitance
C
obo
⎯
⎯
3 pF
V
CB
= 20V, f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website
4. Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤ 2%.
Top View
Device Schematic
Pin Out Configuration
3
1
2,4
COLLECTOR
EMITTER
BASE
4
3
2
1
C
C
B
E
TOP VIEW