Fzt953, Electrical characteristics, A product line of diodes incorporated – Diodes FZT953 User Manual
Page 4
FZT953
Da
tasheet Number: DS35942 Rev. 3 - 2
4 of 7
December 2012
© Diodes Incorporated
FZT953
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ.
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
-140 -170 -
V I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 10)
BV
CER
-140 -170 -
V I
C
= -1µA,
R
B
≤
1kΩ
Collector-Emitter Breakdown Voltage (Note 10)
BV
CEO
-100 -120 -
V I
C
= -1mA
Emitter-Base Breakdown Voltage
BV
EBO
-7 -8 - V
I
E
= -100µA
Collector Cutoff Current
I
CBO
-
-
<1
-
-50
-1
nA
µ
A
V
CB
= -100V
V
CB
= -100V, T
A
= +100°C
Collector Cutoff Current
I
CER
R
≤
1kΩ
-
-
<1
-
-50
-1
nA
µA
V
CB
= -100V
V
CB
= -100V, T
A
= +100°C
Emitter Cutoff Current
I
EBO
- <1
-10 nA
V
EB
= -6V
DC current transfer Static ratio (Note 10)
h
FE
100 200 -
-
I
C
= -10mA, V
CE
= -1V
100 200 300
I
C
= -1A, V
CE
= -1V
50 90 -
I
C
= -3A, V
CE
= -1V
30 50 -
I
C
= -4A, V
CE
= -1V
- 15 -
I
C
= -10A, V
CE
= -1V
Collector-Emitter Saturation Voltage (Note 10)
V
CE(sat)
-
-20
-50
mV
I
C
= -100mA, I
B
= -10mA
-
-90 -115
I
C
= -1A, I
B
= -100mA
-
-160 -220
I
C
= -2A, I
B
= -200mA
-
-300 -420
I
C
= -4A, I
B
= -400mA
Base-Emitter Saturation Voltage (Note 10)
V
BE(sat)
- -1010
-1170 mV
I
C
= -4A, I
B
= -400mA
Base-Emitter Turn-on Voltage (Note 10)
V
BE(on)
- -925
-1160 mV
I
C
= -4A, V
CE
= -1V
Transitional Frequency
f
T
- 125 - MHz
I
C
= -100mA, V
CE
= -10V,
f = 50MHz
Output capacitance
C
obo
- 65 - pF
V
CB
= -10V, f = 1MHz
Switching Time
t
ON
- 110 -
ns
V
CC
= -10V, I
C
= -2A,
I
B1
= -I
B2
=
-200mA
t
OFF
- 460 -
Notes:
10. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.