Diodes FZT851 - Manual (Page 2)

FZT851
Document Number DS33174 Rev. 3 - 2
2 of 7
www.diodes.com
January 2013
© Diodes Incorporated
FZT851
A Product Line of
Diodes Incorporated
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
150 V
Collector-Emitter Voltage V
CEO
60 V
Emitter-Base Voltage V
EBO
7 V
Continuous Collector Current I
C
6 A
Peak Pulse Current I
CM
20 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
Linear derating factor
(Note 6)
P
D
3.0
24 W
mW/°C
(Note 7)
1.6
12.8
Thermal Resistance, Junction to Ambient
(Note 6) R
θJA
42
°C/W (Note 7) R
θJA
78
Thermal Resistance Junction to Lead (Note 8) R
θJL
8.84
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
ESD Ratings
(Note 9)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM ≥ 8,000 V 3B
Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C
Notes: 6. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; device measured when
operating in steady state condition.
7. Same as note (6), except the device is mounted on 50mm X 50mm single sided 2oz weight copper.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.