Diodes FZT792A - Manual

SOT223 PNP SILICON PLANAR HIGH GAIN
MEDIUM POWER TRANSISTOR
ISSUE 3 - NOVEMBER 1995
FEATURES
* High gain and Very low saturation voltage
APPLICATIONS
* Battery powered circuits
COMPLEMENTARY TYPE - FZT692B
PARTMARKING DETAIL - FZT792A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-75 V
Collector-Emitter Voltage V
CEO
-70 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-5 A
Continuous Collector Current I
C
-2 A
Power Dissipation at T
amb
=25°C P
tot
2 W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T amb = 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages V
(BR)CBO
-75 -100 V I
C
=-100 µ A
V
(BR)CEO
-70 -90 V I
C
=-10mA*
V
(BR)EBO
-5 -8.5 V I
E
=-100 µ A
Cut-Off Currents I
CBO
-0.1
-10
µ A
µ A
V
CB
=-40V
V
CB
=-40V,
T
amb
=100°C
I
EBO
-0.1 µ A V
EB
=-4V
Saturation Voltages V
CE(sat)
-0.30
-0.30
-0.30
-0.45
-0.50
-0.50
V
V
V
I
C
=-500mA, I
B
=-5mA*
I
C
=-1A, I
B
=-25mA*
I
C
=-2A, I
B
=-200mA*
V
BE(sat)
-0.80 -0.95 V I
C
=-1A, I
B
=-25mA*
FZT792A
C
C
E
B
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