Diodes FZT751Q - Manual (Page 2)

FZT751Q
Document Number DS36963 Rev. 1 - 2
2 of 7
www.diodes.com
March 2014
© Diodes Incorporated
FZT751Q
A Product Line of
Diodes Incorporated
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
-80 V
Collector-Emitter Voltage V
CEO
-60 V
Emitter-Base Voltage V
EBO
-7 V
Continuous Collector Current I
C
-3 A
Peak Pulse Current I
CM
-6 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
(Note 6)
P
D
2 W
(Note 7) 3 W
Thermal Resistance, Junction to Ambient
(Note 6)
R
θJA
62.5 C/W
(Note 7) 41.7 C/W
Thermal Resistance, Junction to Leads (Note 8) R
θJL
12.9 C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 C
ESD Ratings
(Note 9)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 6. For a device mounted with the collector lead on 25mm x 25mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady-state.
7. Same as note (6), except the device is mounted on 50mm x 50mm 2oz copper.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.