Electrical characteristics, Fzt692b, A product line of diodes incorporated – Diodes FZT692B User Manual
Page 4
FZT692B
Document number: DS33157 Rev. 4 - 2
4 of 7
December 2013
© Diodes Incorporated
FZT692B
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
70 — — V
I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 10)
BV
CEO
70 — — V
I
C
= 10mA
Emitter-Base Breakdown Voltage
BV
EBO
7 — — V
I
E
= 100µA
Collector-Base Cutoff Current
I
CBO
—
— 100 nA
V
CB
= 55V
Collector-Emitter Cutoff Current
I
CES
—
— 100 nA
V
CE
= 55V
Emitter Cutoff Current
I
EBO
—
— 100 nA
V
EB
= 5.6V
DC Current Gain (Note 10)
h
FE
500
400
150
—
—
—
—
—
—
—
I
C
= 100mA, V
CE
= 2V
I
C
= 500mA, V
CE
= 2V
I
C
= 1A, V
CE
= 2V
Collector-Emitter Saturation Voltage (Note 10)
V
CE(sat)
—
—
—
—
—
—
0.15
0.5
0.5
V
I
C
= 0.1A, I
B
= 0.5mA
I
C
= 1A, I
B
= 10mA
I
C
= 2A, I
B
= 200mA
Base-Emitter Saturation Voltage (Note 10)
V
BE(sat)
— — 0.9 V
I
C
= 1A, I
B
= 10mA
Base-Emitter Turn-On Voltage (Note 10)
V
BE(on)
— — 0.9 V
I
C
= 1A, V
CE
= 2V
Input Capacitance
C
ibo
— 200 — pF
V
EB
= 0.5V, f = 1MHz
Output Capacitance
C
obo
— 12 — pF
V
CB
= 10V, f = 1MHz
Current Gain-Bandwidth Product
f
T
150 — — MHz
V
CE
= 5V, I
C
= 50mA, f=50MHz
Turn-On Time
t
on
— 46 — ns
V
CC
= 10V, I
C
= 500mA
I
B1
= -I
B2
= 50mA
Turn-Off Time
t
off
— 1440 — ns
Note:10. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.