Fzt651q, Absolute maximum ratings, Thermal characteristics – Diodes FZT651Q User Manual
Page 2: Esd ratings
FZT651Q
Document Number DS36917 Rev. 1 - 2
2 of 7
February 2014
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FZT651Q
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Unit
Collector-Base Voltage
V
CBO
80 V
Collector-Emitter Voltage
V
CEO
60 V
Emitter-Base Voltage
V
EBO
7 V
Continuous Collector Current
I
C
3 A
Peak Pulse Current
I
CM
6 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Unit
Power Dissipation
(Note 6)
P
D
2 W
(Note 7)
3
W
Thermal Resistance, Junction to Ambient
(Note 6)
R
θJA
62.5
°C/W
(Note 7)
41.7
°C/W
Thermal Resistance, Junction to Leads (Note 8)
R
θJL
12.9
°C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
ESD Ratings
(Note 9)
Characteristic Symbol
Value
Unit
JEDEC
Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3a
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes:
6. For a device mounted with the collector lead on 25mm x 25mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady-state.
7. Same as note (6), except the device is mounted on 50mm x 50mm 2oz copper.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.