Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes FZT1053A User Manual
Page 2: Fzt1053a, A product line of diodes incorporated
FZT1053A
Document number: DS33185 Rev. 3 - 2
2 of 5
September 2011
© Diodes Incorporated
FZT1053A
A Product Line of
Diodes Incorporated
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Collector-Base Voltage
V
CBO
150 V
Collector-Emitter Voltage
V
CEO
75 V
Emitter-Base Voltage
V
EBO
7.5 V
Continuous Collector Current
I
C
4.5 A
Base Current
I
B
500 mA
Peak Pulse Current (Note 2)
I
CM
10 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Collector Power Dissipation (Note 2)
P
D
2.5 W
Thermal Resistance, Junction to Ambient (Note 2)
R
θJA
50
°C/W
Thermal Resistance, Junction to Leads (Note 3)
R
θJL
10.88
°C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ.
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
150 250 -
V
I
C
= 100µA
Collector-Emitter Breakdown Voltage
BV
CES
150 250 -
V
I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 4)
BV
CEO
75 100 -
V
I
C
= 10mA
Collector-Emitter Breakdown Voltage
BV
CEV
150 250 -
V
I
C
= 100µA, V
EB
= 1V
Emitter-Base Breakdown Voltage
BV
EBO
7.5 8.8 -
V
I
E
= 100µA
Collector Cutoff Current
I
CBO
- 0.9 10 nA
V
CB
= 120V
Collector Cutoff Current
I
CES
- 1.5
10 nA
V
CES
= 120V
Emitter Cutoff Current
I
EBO
- 0.3 10 nA
V
EB
= 4V
DC current transfer Static ratio (Note 4)
h
FE
270 440 -
-
I
C
= 10mA, V
CE
= 2V
300 450 1200
I
C
= 0.5A, V
CE
= 2V
300 450 -
I
C
= 1A, V
CE
= 2V
40 60 -
I
C
= 4.5A, V
CE
= 2V
- 20 -
I
C
= 10A, V
CE
= 2V
Collector-Emitter Saturation Voltage (Note 4)
V
CE(sat)
-
21 30
mV
I
C
= 0.2A, I
B
= 20mA
-
55 75
I
C
= 0.5A, I
B
= 20mA
-
150 200
I
C
= 1A, I
B
= 10mA
-
160 210
I
C
= 2A, I
B
= 100mA
-
350 440
I
C
= 4.5A, I
B
= 200mA
Base-Emitter Saturation Voltage (Note 4)
V
BE(sat)
- 900
1000 mV
I
C
= 3A, I
B
= 100mA
Base-Emitter Turn-on Voltage (Note 4)
V
BE(on)
- 825
950 mV
I
C
= 3A, V
CE
= 2V
Transitional Frequency (Note 4)
f
T
- 140 - MHz
I
C
= 50mA, V
CE
= 10V,
f = 100MHz
Output capacitance
C
obo
- 21 30 pF
V
CB
= 10V, f = 1MHz,
Switching Time
t
on
- 162 - ns
V
CC
= 50V, I
C
= 2A,
I
B1
= I
B2
= ±20mA
t
off
- 900 - ns
Notes:
2. For the device mounted on 50mm x 50mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
3. Thermal resistance from junction to solder-point (at the end of the drain lead)
4. Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤2%.