Diodes FZT593 User Manual
Fzt593, Sot223 pnp silicon planar high voltage transistor
SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 - NOVEMBER 1995
✪
COMPLEMENTARY TO FZT493
PARTMARKING DETAIL - FZT593
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-120
V
Collector-Emitter Voltage
V
CEO
-100
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-2
A
Continuous Collector Current
I
C
-1
A
Base Current
I
B
-200
mA
Power Dissipation at T
amb
=25°C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
MIN. MAX. UNIT CONDITIONS.
Breakdown Voltages
V
(BR)CBO
-120
V
I
C
=-100
µ
A
V
(BR)CEO
-100
V
I
C
=-10mA*
V
(BR)EBO
-5
V
I
E
=-100
µ
A
Collector Cut-Off Current
I
CBO
-100 nA
V
CB
=-100V
Emitter Cut-Off Current
I
EBO
-100 nA
V
EB
=-4V
Collector-Emitter Cut-Off Current
I
CES
-100 nA
V
CES
=-100V
Saturation Voltages
V
CE(sat)
-0.2
-0.3
V
V
I
C
=-250mA,I
B
=-25mA*
I
C
=-500mA I
B
=-50mA*
V
BE(sat)
-1.1
V
I
C
=-500mA,I
B
=-50mA*
Base-Emitter Turn-on Voltage
V
BE(on)
-1.0
V
I
C
=-1mA, V
CE
=-5V*
Static Forward Current Transfer
Ratio
h
FE
100
100
100
50
300
I
C
=-1mA, V
CE
=-5V
I
C
=-250mA,V
CE
=-5V*
I
C
=-500mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
Transition Frequency
f
T
50
MHz I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance
C
obo
5
pF
V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
For typical Characteristics graphs see FMMT593 datasheet
FZT593
3 - 196
C
C
E
B