Diodes FZT493 User Manual
Fzt493, Sot223 npn silicon planar medium power transistor
SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 NOVEMBER 1995
✪
COMPLEMENTARY TYPE FZT593
PARTMARKING DETAIL
FZT493
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
120
V
Collector-Emitter Voltage
V
CEO
100
V
Emitter-Base Voltage
V
EBO
5
V
Peak Pulse Current
I
CM
2
A
Continuous Collector Current
I
C
1
A
Base Current
I
B
200
mA
Power Dissipation at T
amb
=25°C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Breakdown Voltages
V
(BR)CBO
120
V
I
C
=100
µ
A
V
(BR)CEO
100
V
I
C
=10mA*
V
(BR)EBO
5
V
I
E
=100
µ
A
Cut-Off Currents
I
CBO
100
nA
V
CB
=100V
I
EBO
100
nA
V
EB
=4V
I
CES
100
nA
V
CES
=100V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.3
0.6
V
V
I
C
=500mA, I
B
=50mA*
I
C
=1A, I
B
=100mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.15
V
I
C
=1A, I
B
=100mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
1.0
V
I
C
=1A, V
CE
=10V*
Static Forward Current
h
FE
100
100
80
30
300
I
C
=1mA, V
CE
=10V
I
C
=250mA, V
CE
=10V*
I
C
=500mA, V
CE
=10V*
I
C
= 1A, V
CE
=10V*
Transition Frequency
f
T
150
MHz
I
C
=50mA, V
CE
=10V,
f =100MHz
Output Capacitance
C
obo
10
pF
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
For typical Characteristics graphs see FMMT493 datasheet
FZT493
C
C
E
B
3 - 190