Diodes FMMTA56 - Manual

SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 4 – MARCH 2001 ✪
FEATURES
* Gain of 50 at I
C
=100mA
PARTMARKING DETAIL - FMMTA56 - 2G
FMMTA56R - MB
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL FMMTA56 UNIT
Collector-Base Voltage V
CBO
-80 V
Collector-Emitter Voltage V
CEO
-80 V
Emitter-Base Voltage V
EBO
-4 V
Continuous Collector Current I
C
-500 mA
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature
Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
FMMTA56
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Emitter Breakdown
Voltage V
(BR)CEO
-80 V I
C
=-1mA, I
B
=0*
Emitter-Base Breakdown
Voltage V
(BR)EBO
-4 V I
E
=-100
µ
A, I
C
=0
Collector-Emitter Cut-Off
Current I
CES
-0.1
µ
A V
CE
=-60V
Collector-Base Cut-Off Current I
CBO
-0.1
µ
A V
CB
=-80V, I
E
=0
V
CB
=-60V, I
E
=0
Static Forward Current Transfer
Ratio h
FE
50
50 I
C
=-10mA, V
CE
=1V*
I
C
=-100mA, V
CE
=1V*
Collector-Emitter Saturation
Voltage V
CE(sat)
-0.25 V I
C
=-100mA, I
B
=-10mA*
Base-Emitter
Turn-On Voltage V
BE(on)
-1.2 V I
C
=-100mA, V
CE
=-1V*
Transition
Frequency f
T
100 MHz I
C
=-10mA, V
CE
=-2V
f=100MHz
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
FMMTA56
C
B
E
SOT23
TBA