Electrical characteristics, Fmmt493, A product line of diodes incorporated – Diodes FMMT493 User Manual
Page 4
FMMT493
Document number: DS33093 Rev. 4 - 2
4 of 7
April 2013
© Diodes Incorporated
FMMT493
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
120 — — V
I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 9)
BV
CEO
100 — — V
I
C
= 1mA
Emitter-Base Breakdown Voltage
BV
EBO
7 — — V
I
E
= 100µA
Collector Cutoff Current
I
CBO
— — 100 nA
V
CB
= 100V
Emitter Cutoff Current
I
EBO
— — 50 nA
V
EB
= 5.6V
Collector Emitter Cutoff Current
I
CES
— — 100 nA
V
CE
= 100V
Static Forward Current Transfer Ratio (Note 9)
h
FE
100
100
60
20
—
—
—
—
—
300
—
—
—
I
C
= 1mA, V
CE
= 10V
I
C
= 250mA, V
CE
= 10V
I
C
= 500mA, V
CE
= 10V
I
C
= 1A, V
CE
= 10V
Collector-Emitter Saturation Voltage (Note 9)
V
CE(sat)
— —
300
600
mV
mV
I
C
= 500mA, I
B
= 50mA
I
C
= 1A, I
B
= 100mA
Base-Emitter Turn-On Voltage(Note 9)
V
BE(on)
— — 1.0 V
I
C
= 1A, V
CE
= 10V
Base-Emitter Saturation Voltage(Note 9)
V
BE(sat)
— — 1.15 V
I
C
= 1A, I
B
= 100mA
Output Capacitance
C
obo
— — 10 pF
V
CB
= 10V, f = 1MHz
Transition Frequency
f
T
150 — — MHz
V
CE
= 10V, I
C
= 50mA,
f = 100MHz
Note:
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.