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Diodes FMMT451 User Manual

Fmmt451, Typical characteristics, Absolute maximum ratings

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SOT23 NPN SILICON PLANAR
HIGH PERFROMANCE TRANSISTOR

ISSUE 3 - OCTOBER 1995

FEATURES
* Low equivalent on-resistance; R

CE(sat)

400m

at 1A

* 1 Amp continuous current
* P

tot

= 500 mW

COMPLEMENTARY TYPE – FMMT551
PARTMARKING DETAIL –

451

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

V

CBO

80

V

Collector-Emitter Voltage

V

CEO

60

V

Emitter-Base Voltage

V

EBO

5

V

Peak Pulse Current

I

CM

2

A

Continuous Collector Current

I

C

1

A

Base Current

I

B

200

mA

Power Dissipation at T

amb

=25°C

P

tot

500

mW

Operating and Storage Temperature Range

T

j

:T

stg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

SYMBOL

MIN. MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V

(BR)CBO

80

V

I

C

=100

µ

A

Collector-Emitter

Sustaining Voltage

V

CEO(sus)

60

V

I

C

=10mA*

Emitter-Base Breakdown

Voltage

V

(BR)EBO

5

V

I

E

=100

µ

A

Collector Cut-Off Current I

CBO

0.1

µ

A

V

CB

=60V

Emitter Cut-Off Current

I

EBO

0.1

µ

A

V

EB

=4V

Collector-Emitter

Saturation Voltage

V

CE(sat)

0.35

V

I

C

=150mA, I

B

=15mA*

Base-Emitter

Saturation Voltage

V

BE(sat)

1.1

V

I

C

=150mA, I

B

=15mA*

Static Forward Current

Transfer Ratio

h

FE

50

10

150

I

C

=150mA, V

CE

=10V*

I

C

=1A, V

CE

=10V*

Transition

Frequency

f

T

150

MHz

I

C

=50mA, V

CE

=10V

f=100MHz

Output Capacitance

C

obo

15

pF

V

CB

=10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

2%

FMMT451

C

B

E

3 - 109

3 - 108

FMMT451

TYPICAL CHARACTERISTICS

V

CE(sat)

v I

C

I

C

-

Collector Current (Amps)

V

- (

Vol

ts

)

I

C

-

Collector Current (Amps)

I

C

-

Collector Current (Amps)

h

FE

v I

C

V

BE(sat)

v I

C

I

C

-

Collector Current (Amps)

V

BE(on)

v I

C

h

V

- (

Vol

ts

)

V

- (V

ol

ts

)

40

80

120

160

200

0

10

0.2

0.4

0.6

0.8

Switching Speeds

I

C

-

Collector Current (Amps)

S

w

itch

in

g t

im

e

0.001

0.01

0.1

1

I

C

/I

B

=10

0.1

1

I

B1

=I

B2

=I

C

/10

0.01

ts

tf

td

tr

ts

ns

tf,tr,td

ns

100

50

150

0

V

CE

=2V

0

I

C

/I

B

=10

0.2

0.4

0.8

1.0

1.2

1.4

1.6

1.8

0.6

V

CE

=2V

ts

tf

td

tr

800

400

200

600

0

0.001

1

0.01

0.1

10

0.2

0.4

0.8

1.0

1.2

1.4

1.6

1.8

0.6

0.001

1

0.01

0.1

10

0.001

1

0.01

0.1

10

V

CE

=10V

100

Single Pulse Test at Tamb=25°C

10

1

Safe Operating Area

V

CE

- Collector Emitter Voltage (V)

1

10

0.1

0.1

0.01

1s

DC

100ms

10ms
100

µ

s

1ms