Diodes FMMT451 - Manual

SOT23 NPN SILICON PLANAR
HIGH PERFROMANCE TRANSISTOR
ISSUE 3 - OCTOBER 1995 ✪
FEATURES
* Low equivalent on-resistance; R
CE(sat)
400m Ω at 1A
* 1 Amp continuous current
* P
tot
= 500 mW
COMPLEMENTARY TYPE – FMMT551
PARTMARKING DETAIL –
451
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
80 V
Collector-Emitter Voltage V
CEO
60 V
Emitter-Base Voltage V
EBO
5 V
Peak Pulse Current I
CM
2 A
Continuous Collector Current I
C
1 A
Base Current I
B
200 mA
Power Dissipation at T
amb
=25°C P
tot
500 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
80 V I
C
=100 µ A
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
60 V I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5 V I
E
=100 µ A
Collector Cut-Off Current I
CBO
0.1 µ A V
CB
=60V
Emitter Cut-Off Current I
EBO
0.1 µ A V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.35 V I
C
=150mA, I
B
=15mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.1 V I
C
=150mA, I
B
=15mA*
Static Forward Current
Transfer Ratio
h
FE
50
10
150 I
C
=150mA, V
CE
=10V*
I
C
=1A, V
CE
=10V*
Transition
Frequency
f
T
150 MHz I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance C
obo
15 pF V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300 µ s. Duty cycle ≤ 2%
FMMT451
C
B
E
3 - 109 3 - 108
FMMT451
TYPICAL CHARACTERISTICS
V CE(sat) v I C
I C - Collector Current (Amps)
V
- (
Vol
ts
)
I C - Collector Current (Amps) I C - Collector Current (Amps)
h FE v I C V BE(sat) v I C
I C - Collector Current (Amps)
V BE(on) v I C
h
V
- (
Vol
ts
)
V
- (V
ol
ts
)
40
80
120
160
200
0 10
0.2
0.4
0.6
0.8
Switching Speeds
I C - Collector Current (Amps)
S
w
itch
in
g t
im
e
0.001 0.01 0.1 1
I C /I B =10
0.1 1
I B1 =I B2 =I C /10
0.01
ts
tf
td
tr
ts
ns
tf,tr,td
ns
100
50
150
0
V CE =2V
0
I C /I B =10
0.2
0.4
0.8
1.0
1.2
1.4
1.6
1.8
0.6
V CE =2V
ts
tf
td
tr
800
400
200
600
0
0.001 1 0.01 0.1 10
0.2
0.4
0.8
1.0
1.2
1.4
1.6
1.8
0.6
0.001 1 0.01 0.1 10
0.001 1 0.01 0.1 10
V CE =10V
100
Single Pulse Test at Tamb=25°C
10
1
Safe Operating Area
V CE - Collector Emitter Voltage (V)
1 10 0.1
0.1
0.01
1s
DC
100ms
10ms
100
µ s
1ms