Electrical characteristics, New product – Diodes DXT751 User Manual
Page 2

Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V
(BR)CBO
-80
⎯
⎯
V
I
C
= -100
μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-60
⎯
⎯
V
I
C
= -10mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
-5
⎯
⎯
V
I
E
= -100
μA, I
C
= 0
Collector Cutoff Current
I
CBO
⎯
⎯
-0.1
-10
μA
μA
V
CB
= -60V, I
E
= 0
V
CB
= -60V, I
E
= 0, T
A
= 100°C
Emitter Cutoff Current
I
EBO
⎯
⎯
-0.1
μA
V
EB
= -4V, I
C
= 0
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
⎯
-0.08
-0.2
-0.3
-0.6
V
I
C
= -1A, I
B
= -100mA
I
C
= -3A, I
B
= -300mA
Base-Emitter Saturation Voltage
V
BE(SAT)
⎯
-0.9 -1.25 V
I
C
= -1A, I
B
= -100mA
Base-Emitter Turn-On Voltage
V
BE(ON)
⎯
-0.8 -1 V
V
CE
= -2V, I
C
= -1A
DC Current Gain
h
FE
70
100
80
40
200
180
160
140
⎯
300
⎯
⎯
⎯
V
CE
= -2V, I
C
= -50mA
V
CE
= -2V, I
C
= -500mA
V
CE
= -2V, I
C
= -1A
V
CE
= -2V, I
C
= -2A
AC CHARACTERISTICS
Transition Frequency
f
T
100 145
⎯
MHz
V
CE
= -10V, I
C
= -50mA, f = 100MHz
Output Capacitance
C
obo
⎯
⎯
30 pF
V
CB
= -10V, f = 1MHz
Switching Times
t
on
t
off
⎯
⎯
45
200
⎯
⎯
ns
ns
I
C
= -500mA, V
CC
= -10V
I
B1
= I
B2
= -50mA
NEW PRODUCT
Notes:
4. Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤2%.
0
0
0.2
0.4
0.6
0.8
1.0
25
50
75
100
125
150
P
,
P
O
WE
R
DIS
S
IP
A
T
IO
N (
W
)
D
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 1 Power Dissipation
vs. Ambient Temperature (Note 3)
-V
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
CE
0
1
2
3
4
5
DS31185 Rev. 3 - 2
2 of 4
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