Electrical characteristics – Diodes DXT2013P5 User Manual
Page 4
DXT2013P5
Document number: DS32010 Rev. 2 - 2
4 of 7
March 2010
© Diodes Incorporated
DXT2013P5
PowerDI is a registered trademark of Diodes Incorporated.
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max Unit
Test
Condition
Collector-Base Breakdown Voltage
V
(BR)CBO
-140 -160
⎯
V
I
C
= -100
μA
Collector-Emitter Breakdown Voltage (Note 7)
V
(BR)CEO
-100 -115
⎯
V
I
C
= -10mA
Emitter-Base Breakdown Voltage
V
(BR)EBO
-7.0 -8.1
⎯
V
I
E
= -100
μA
Collector Cutoff Current
I
CBO
⎯
<1
⎯
-20
-0.5
nA
μA
V
CB
= -100V
V
CB
= -100V, T
amb
= 100 °C
Collector Cutoff Current
I
CER
R
≤1kΩ
⎯
<1
⎯
-20
-0.5
nA
μA
V
CB
= -100V
V
CB
= -100V, T
amb
= 100 °C
Emitter Cutoff Current
I
EBO
⎯
<1 -10 nA
V
EB
= -6V
Collector-Emitter Saturation Voltage (Note 7)
V
CE(sat)
⎯
-20
-70
-120
-240
-30
-90
-150
-340
mV
I
C
= -0.1A, I
B
= -10mA
I
C
= -1A, I
B
= -100mA
I
C
= -2A, I
B
= -200mA
I
C
= -4A, I
B
= -400mA
Base-Emitter Saturation Voltage (Note 7)
V
BE(sat)
⎯
-985 -1100 mV
I
C
= -4A, I
B
= -400mA
Base-Emitter Turn-On Voltage (Note 7)
V
BE(on)
⎯
-920 -1050 mV
V
CE
= -4V, I
C
= -2A
DC Current Gain (Note 7)
h
FE
100
100
25
15
⎯
250
200
50
30
5
⎯
300
⎯
⎯
⎯
⎯
I
C
= -10mA, V
CE
= -1V
I
C
= -1A, V
CE
= -1V
I
C
= -3A, V
CE
= -1V
I
C
= -4A, V
CE
= -1V
I
C
= -10A, V
CE
= -1V
Transition Frequency
f
T
⎯
125
⎯
MHz
I
C
= -100mA, V
CE
= -10V,
f = 50MHz
Output Capacitance
C
obo
⎯
42
⎯
pF
V
CB
= -10V, f = 1MHz
Switching Times
t
on
t
off
⎯
⎯
42
540
⎯
⎯
ns
ns
I
C
= -1A, V
CC
= -10V,
I
B1
= I
B2
= -100mA
Notes:
7. Pulse Test: Pulse width
≤300μs. Duty cycle ≤2.0%.