Electrical characteristics, Dss8110y – Diodes DSS8110Y User Manual
Page 3
DSS8110Y
Document number: DS31679 Rev. 2 - 2
3 of 5
October 2010
© Diodes Incorporated
DSS8110Y
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
BV
CBO
120
⎯
⎯
V
I
C
= 100
μA, I
E
= 0
Collector-Emitter Breakdown Voltage
BV
CEO
100
⎯
⎯
V
I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
5
⎯
⎯
V
I
E
= 100
μA, I
C
= 0
Collector Cutoff Current
I
CBO
⎯
⎯
⎯
⎯
100
50
nA
μA
V
CB
= 80V, I
E
= 0
V
CB
= 80V, I
E
= 0, T
A
= 150°C
Collector Cutoff Current
I
CES
⎯
⎯
100 nA
V
CE
= 80V, V
BE
= 0
Emitter Cutoff Current
I
EBO
⎯
⎯
100 nA
V
EB
= 4V, I
C
= 0
ON CHARACTERISTICS (Note 5)
DC Current Gain
h
FE
150
150
100
80
⎯
⎯
⎯
⎯
⎯
500
⎯
⎯
V
V
CE
= 10V, I
C
= 1mA
V
CE
= 10V, I
C
= 250mA
V
CE
= 10V, I
C
= 500mA
V
CE
= 10V, I
C
= 1A
Collector-Emitter Saturation Voltage
V
CE(sat)
⎯
⎯
⎯
⎯
⎯
⎯
40
120
200
mV
I
C
= 100mA, I
B
= 10mA
I
C
= 500mA, I
B
= 50mA
I
C
= 1A, I
B
= 100mA
Collector-Emitter Saturation Resistance
R
CE(sat)
⎯
⎯
200 m
Ω
I
C
= 1A, I
B
= 100mA
Base-Emitter Saturation Voltage
V
BE(sat)
⎯
⎯
1.05 V
I
C
= 1A, I
B
= 100mA
Base-Emitter Turn On Voltage
V
BE(on)
⎯
⎯
0.9 V
V
CE
= 10V, I
C
= 1A
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯
⎯
7.5 pF
V
CB
= 10V, f = 1.0MHz
Current Gain-Bandwidth Product
f
T
100
⎯
⎯
MHz
V
CE
= 10V, I
C
= 50mA, f = 100MHz
Notes:
5. Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤2%.
0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
, COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
I,
C
O
LL
E
C
T
O
R
C
U
R
R
EN
T
(A
)
C
I = 1mA
B
I = 2mA
B
I = 3mA
B
I = 4mA
B
I = 5mA
B
0
100
200
300
400
500
0.001
0.01
0.1
1
10
I , COLLECTOR CURRENT (A)
C
Fig. 5 Typical DC Current Gain vs. Collector Current
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
h
, DC C
URRENT
GAI
N
FE