Electrical characteristics, Dss5160t – Diodes DSS5160T User Manual
Page 3
DSS5160T
Document number: DS35532 Rev. 1 - 2
3 of 6
January 2012
© Diodes Incorporated
DSS5160T
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Conditions
Collector-Base Breakdown Voltage
BV
CBO
-80
⎯
⎯
V
I
C
= -100
μA
Collector-Emitter Breakdown Voltage (Note 6)
BV
CEO
-60
⎯
⎯
V
I
C
= -10mA
Emitter-Base Breakdown Voltage
BV
EBO
-5
⎯
⎯
V
I
E
= -100
μA
Collector-Base Cutoff Current
I
CBO
⎯
⎯
-100
nA
V
CB
= -20V, I
E
= 0
⎯
⎯
-50
μA
V
CB
= -20V, I
E
= 0, T
A
= 150°C
Emitter-Base Cutoff Current
I
EBO
⎯
⎯
-100 nA
V
EB
= -5V, I
C
= 0
DC Current Gain (Note 6)
h
FE
200
⎯
⎯
⎯
V
CE
= -5V, I
C
= -1mA
150
⎯
⎯
V
CE
= -5V, I
C
= -500mA
100
⎯
⎯
V
CE
= -5V, I
C
= -1A
Collector-Emitter Saturation Voltage (Note 6)
V
CE(sat)
⎯
⎯
-175
mV
I
C
= -100mA, I
B
= -1mA
⎯
⎯
-180
I
C
= -500mA, I
B
= -50mA
⎯
⎯
-340
I
C
= -1A, I
B
= -100mA
Equivalent On-Resistance
R
CE(sat)
⎯
⎯
340
m
Ω I
E
= -1A, I
B
= -100mA
Base-Emitter Saturation Voltage
V
BE(sat)
⎯
⎯
-1.1 V
I
C
= -1A, I
B
= -50mA
Base-Emitter Turn-on Voltage
V
BE(on)
⎯
⎯
-0.9 V
V
CE
= -5V, I
C
= -1A
Transition Frequency
f
T
150
⎯
⎯
MHz
V
CE
= -10V, I
C
= -50mA,
f = 100MHz
Output Capacitance
C
ob
⎯
⎯
15 pF
V
CB
= -10V, f = 1MHz
Turn-On Time
t
on
⎯
75
⎯
ns
V
CC
= -10V, I
C
= -0.5A,
I
B1
= I
B2
= -25mA
Delay Time
t
d
⎯
35
⎯
ns
Rise Time
t
r
⎯
40
⎯
ns
Turn-Off Time
t
off
⎯
265
⎯
ns
Storage Time
t
s
⎯
230
⎯
ns
Fall Time
t
f
⎯
35
⎯
ns
Notes:
6. Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤2%.