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Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DPBT8105 User Manual

Page 2: Dpbt8105

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DPBT8105

Document number: DS30514 Rev. 9 - 2

2 of 5

www.diodes.com

June 2011

© Diodes Incorporated

DPBT8105





Maximum Ratings

@T

A

= 25°C unless otherwise specified

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

-80

V

Collector-Emitter Voltage

V

CEO

-60

V

Emitter-Base Voltage

V

EBO

-5

V

Collector Current - Continuous

I

C

-1

A

Peak Pulse Collector Current

I

CM

-2 A


Thermal Characteristics

Characteristic

Symbol Value Unit

Power Dissipation (Note 4) @ T

A

= 25

°C

P

D

600

mW

Thermal Resistance, Junction to Ambient (Note 4) @ T

A

= 25

°C

R

θJA

209

°C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C


Electrical Characteristics

@T

A

= 25°C unless otherwise specified

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage

V

(BR)CBO

-80

V

I

C

= -100

μA, I

E

= 0

Collector-Emitter Breakdown Voltage

V

(BR)CEO

-60

V

I

C

= -10mA, I

B

= 0

Emitter-Base Breakdown Voltage

V

(BR)EBO

-5

V

I

E

= -100

μA, I

C

= 0

Collector Cutoff Current

I

CBO

-100

nA

V

CB

= -60V, I

E

= 0

Collector Cutoff Current

I

CES

-100 nA

V

CE

= -60V

Emitter Cutoff Current

I

EBO

-100

nA

V

EB

= -4V, I

C

= 0

ON CHARACTERISTICS (Note 5)

DC Current Gain

h

FE

100
100

80
30

300


I

C

= -1mA, V

CE

= -5V

I

C

= -500mA, V

CE

= -5V

I

C

= -1A, V

CE

= -5V

I

C

= -2A, V

CE

= -5V

Collector-Emitter Saturation Voltage

V

CE(SAT)


-0.3
-0.6

V

I

C

= -500mA, I

B

= -50mA

I

C

= -1A, I

B

= -100mA

Base-Emitter Saturation Voltage

V

BE(SAT)

-1.2 V

I

C

= -1A, I

B

= -100mA

Base-Emitter Turn On Voltage

V

BE(ON)

-1.0 V

I

C

= -1A, V

CE

= -5V

SMALL SIGNAL CHARACTERISTICS
Output Capacitance

C

obo

12

pF

V

CB

= -10V, f = 1.0MHz

Current Gain-Bandwidth Product

f

T

150

MHz

V

CE

= 10V, I

C

= 50mA, f = 100MHz

Notes:

4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
5. Short duration pulse test used to minimize self-heating effect.