Diodes FZT790A - Manual (Page 2)

SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* Very low equivalent on-resistance; R
CE(sat)
125m Ω at 2A
* Gain of 200 at I
C
=1 Amp and very low saturation voltage
APPLICATIONS
* DC-DC converters, Siren drivers.
COMPLEMENTARY TYPE -
FZT690B
PARTMARKING DETAIL - FZT790A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-50 V
Collector-Emitter Voltage V
CEO
-40 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-6 A
Continuous Collector Current I
C
-3 A
Power Dissipation at T
amb
=25°C P
tot
2 W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages V
(BR)CBO
-50 -70 V I
C
=-100 µ A
V
(BR)CEO
-40 -60 V I
C
=-10mA*
V
(BR)EBO
-5 -8.5 V I
E
=-100 µ A
Collector Cut-Off Current I
CBO
-0.1
-10
µ A
µ A
V
CB
=-30V
V
CB
=-30V,
Tamb
=100°C
Emitter Cut-Off Current I
EBO
-0.1 µ A V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.15
-0.30
-0.40
-0.25
-0.45
-0.75
V
V
V
I
C
=-500mA, I
B
=-5mA*
I
C
=-1A, I
B
=-10mA*
I
C
=-2A, I
B
=-50mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.8 -1.0 V I
C
=-1A, I
B
=-10mA*
Base-EmitterTurn-OnVoltage V
BE(on)
-0.75 V I
C
=-1A, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
300
250
200
150
800 I
C
=-10mA, V
CE
=-2V
I
C
=-500mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
Transition Frequency f
T
100 MHz I
C
=-50mA, V
CE
=-5V
f=50MHz
Output Capacitance C
obo
24 pF V
CB
=-10V,f=1MHz
Switching Times t
on
t
off
35
600
ns
ns
I
C
=-500mA,
I
B1
=-50mA,
I
B2
=-50mA, V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300 µ s. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
FZT790A
0.01 0.1 1 10
0.8
0.6
0
1.6
0.01 0.1 1 10
0.01 0.1 1 10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 1 10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V CE(sat) v I C
I + - Collector Current (Amps)
V
- (
Volt
s)
V CE(sat) v I C
I + - Collector Current (Amps)
V
- (V
olt
s)
I + - Collector Current (Amps) I + - Collector Current (Amps)
h FE v I C V BE(sat) v I C
I + - Collector Current (Amps)
V BE(on) v I C
h
- N
orm
alise
d
Gain
V
- (
Volt
s)
750
500
250
h
- T
ypic
al
Gain
T amb =25°C -55°C
+25°C
+100°C
+175°C
0
0.01 0.1 1 10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
V
- (V
olt
s)
-55°C
+25°C
+100°C
+175°C
1.8
1.4
1.2
1.0
0.4
0.2
0.8
0.6
0
1.6
1.8
1.4
1.2
1.0
0.4
0.2
I C /I B =10
I C /I B =100
I C /I B =40
I C /I B =100
V CE =2V I C /I B =100
V CE =2V -55°C
+25°C
+100°C
+100°C
+25°C
-55°C
1
0.1
Safe Operating Area
V CE - Collector Emitter Voltage (V)
10 100
1s
DC
100ms
10ms
100 µ s
1ms
1
0.01
0.1
10
FZT790A
3 - 249 3 - 248
C
C
E
B