Electrical characteristics, Fzt1051a, A product line of diodes incorporated – Diodes FZT1051 User Manual
Page 4
FZT1051A
Document Number DS33184 Rev.5 - 2
4 of 7
August 2013
© Diodes Incorporated
FZT1051A
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
150 190
V
I
C
= 100µA
Collector-Emitter Breakdown Voltage
BV
CES
150 190
V
I
C
= 100µA
Collector-Emitter Breakdown Voltage
BV
CEV
150 190
V
I
C
= 100µA, V
EB
= 1V
Collector-Emitter Breakdown Voltage (Note 11)
BV
CEO
40 60
V
I
C
= 10mA
Emitter-Base Breakdown Voltage
BV
EBO
7 8.1
V
I
E
= 100µA
Collector Cut-off Current
I
CBO
<1
10
0.5
nA
µA
V
CB
= 120V
V
CB
= 120V, T
A
= +100°C
Collector Cut-off Current
I
CES
<1
10 nA
V
CB
= 120V
Emitter Cut-off Current
I
EBO
<1 10 nA
V
EB
= 6V
Collector-Emitter Saturation Voltage (Note 11)
V
CE(sat)
17
25
mV
I
C
= 200mA, I
B
= 10mA
85 120
I
C
= 1A, I
B
= 10mA
140 180
I
C
= 2A, I
B
= 20mA
250 340
I
C
= 5A, I
B
= 100mA
Base-Emitter Saturation Voltage (Note 11)
V
BE(sat)
980
1100 mV
I
C
= 5A, I
B
= 100mA
Base-Emitter Turn-On Voltage (Note 11)
V
BE(on)
915 1000 mV I
C
= 5A, V
CE
= 2V
DC Current Gain (Note 11)
h
FE
290 440
I
C
= 10mA, V
CE
= 2V
270 450 1200
I
C
= 1A, V
CE
= 2V
130 220
I
C
= 5A, V
CE
= 2V
40 55
I
C
= 10A, V
CE
= 2V
Output Capacitance
C
obo
27 40 pF
V
CB
= 10V, f = 1MHz
Current Gain-Bandwidth Product
f
T
155
MHz
V
CE
= 10V, I
C
= 50mA,
f = 100MHz
Switching Times
t
on
220
ns
I
C
= 3A, V
CC
= 10V,
I
B1
= -I
B2
= 30mA
t
off
540
Notes:
11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%