Diodes FZT549 - Manual

SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 2 – MARCH 1995 ✪
PARTMARKING DETAIL – FZT549
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-35 V
Collector-Emitter Voltage V
CEO
-30 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-2 A
Continuous Collector Current I
C
-1 A
Power Dissipation at T
amb
=25°C P
tot
2 W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-35 V I
C
=-100 µ A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-30 V I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5 V I
E
=-100 µ A
Collector Cut-Off
Current
I
CBO
-0.1
-10
µ A
µ A
V
CB
=-30V
V
CB
=-30V, T
amb
=100°C
Emitter Cut-Off Current I
EBO
-0.1 µ A V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.50
-0.75
V
V
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
-200mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.25 V I
C
=-1A, I
B
=-100mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
-1.0 V I
C
=-1A, V
CE
=-2V*
Static Forward Current h
FE
70
100
80
30
300
I
C
=-50mA, V
CE
=-2V
I
C
=-500mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
Transition Frequency f
T
100 MHz I
C
=-100mA, V
CE
=-5V,
f =100MHz
Output Capacitance C
obo
10 pF V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300 µ s. Duty cycle ≤ 2%
For typical characteristics graphs see FMMT549 datasheet.
FZT549
C
C
E
B
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