Electrical characteristics, Fmmt591a, A product line of diodes incorporated – Diodes FMMT591A User Manual
Page 4
FMMT591A
Document number: DS33105 Rev. 5 - 2
4 of 7
December 2013
© Diodes Incorporated
FMMT591A
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
-40
⎯
⎯
V
I
C
= -100μA
Collector-Emitter Breakdown Voltage (Note 9)
BV
CEO
-40
⎯
⎯
V
I
C
= -10mA
Emitter-Base Breakdown Voltage
BV
EBO
-7
⎯
⎯
V
I
E
= -100μA
Collector Cutoff Current
I
CBO
⎯
⎯
-100 nA
V
CB
= -30V
Collector-Emitter Cutoff Current
I
CES
⎯
⎯
-100 nA
V
CES
= -30V
Emitter Cutoff Current
I
EBO
⎯
⎯
-100 nA
V
EB
= -5.6V
Collector-Emitter Saturation Voltage (Note 9)
V
CE(sat)
⎯
⎯
⎯
⎯
-200
-350
-500
mV
I
C
= -100mA, I
B
= -1mA
I
C
= -500mA, I
B
= -20mA
I
C
= -1A, I
B
= -100mA
Base-Emitter Saturation Voltage (Note 9)
V
BE(sat)
⎯
⎯
-1.1 V
I
C
= -1A, I
B
= -100mA
Base-Emitter Turn-On Voltage (Note 9)
V
BE(on)
⎯
⎯
-1.0 V
I
C
= -1A, V
CE
= -5V
Static Forward Current Transfer Ratio (Note 9)
h
FE
300
300
250
160
30
⎯
⎯
800
⎯
⎯
⎯
⎯
I
C
= -1mA, V
CE
= -5V
I
C
= -100mA, V
CE
= -5V
I
C
= -500mA, V
CE
= -5V
I
C
= -1A, V
CE
= -5V
I
C
= -2A, V
CE
= -5V
Transition Frequency
f
T
150
00
⎯
MHz
V
CE
= -10V, I
C
= -50mA,
f = 100MHz
Output Capacitance
C
obo
⎯
⎯
10 pF
V
CB
= -10V, f = 1MHz
Switching Time
Delay Time
t
(d)
⎯
34.9
⎯
ns
V
CC
= -10V, I
C
= -500mA,
I
B1
= -I
B2
=-25mA
Rise Time
t
(r)
⎯
19.2
⎯
Storage Time
t
(s)
⎯
249
⎯
Fall Time
t
(f)
⎯
62
⎯
Note:
9. Measured under pulsed conditions. Pulse width
≤ 300µs. Duty cycle ≤ 2%