beautypg.com

Diodes FMMT449 User Manual

Fmmt449, Sot23 npn silicon planar medium power transistor, Typical characteristics

background image

SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR

ISSUE 3 - NOVEMBER 1995
FEATURES
* Low equivalent on-resistance; R

CE(sat)

250m

at 1A

COMPLEMENTARY TYPE –

FMMT549

PARTMARKING DETAIL –

449

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

V

CBO

50

V

Collector-Emitter Voltage

V

CEO

30

V

Emitter-Base Voltage

V

EBO

5

V

Peak Pulse Current

I

CM

2

A

Continuous Collector Current

I

C

1

A

Base Current

I

B

200

mA

Power Dissipation at T

amb

= 25°C

P

tot

500

mW

Operating and Storage Temperature Range

T

j

:T

stg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN. MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V

(BR)CBO

50

V

I

C

=1mA, I

E

=0

Collector-Emitter

Breakdown Voltage

V

(BR)CEO

30

V

I

C

=10mA, I

B

=0*

Emitter-Base Breakdown

Voltage

V

(BR)EBO

5

V

I

E

=100

µ

A, I

C

=0

Collector Cut-Off

Current

I

CBO

0.1

10

µ

A

µ

A

V

CB

=40V, I

E

=0

V

CB

=40V, T

amb

=100°C

Emitter Cut-Off Current

I

EBO

0.1

µ

A

V

EB

=4V, I

C

=0

Collector-Emitter

Saturation Voltage

V

CE(sat)

0.5

1.0

V

V

I

C

=1A, I

B

=100mA*

I

C

=2A, I

B

=200mA*

Base-Emitter

Saturation Voltage

V

BE(sat)

1.25

V

I

C

=1A, I

B

=100mA*

Base-Emitter Turn-On

Voltage

V

BE(on)

1.0

V

I

C

=1A, V

CE

=2V*

Static Forward Current

Transfer Ratio

h

FE

70

100

80

40

300

I

C

=50mA, V

CE

=2V*

I

C

=500mA, V

CE

=2V*

I

C

=1A, V

CE

=2V*

I

C

=2A, V

CE

=2V*

Transition

Frequency

f

T

150

MHz

I

C

=50mA, V

CE

=10V

f=100mHz

Output Capacitance

C

obo

15

pF

V

CB

=10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

2%

Spice parameter data is available upon request for this device

FMMT449

C

B

E

3 - 106

FMMT449

TYPICAL CHARACTERISTICS

V

CE(sat)

v I

C

I

+

-

Collector Current (Amps)

V

- (V

ol

ts

)

I

+

-

Collector Current (Amps)

I

+

-

Collector Current (Amps)

h

FE

v I

C

V

BE(sat)

v I

C

I

+

-

Collector Current (Amps)

V

BE(on)

v I

C

h

V

- (V

ol

ts

)

V

- (

Vol

ts

)

40

80

120

160

200

0

10

0.2

0.4

0.6

0.8

Switching Speeds

I

+

-

Collector Current (Amps)

S

wi

tch

ing t

im

e

0.001

0.01

0.1

1

I

C

/I

B

=10

0.1

1

I

B1

=I

B2

=I

C

/10

0.01

ts

tf

td

tr

ts

ns

tf,tr,td

ns

100

50

150

0

V

CE

=2V

0

I

C

/I

B

=10

0.2

0.4

0.8

1.0

1.2

1.4

1.6

1.8

0.6

V

CE

=2V

ts

tf

td

tr

800

400

200

600

0

0.001

1

0.01

0.1

10

0.2

0.4

0.8

1.0

1.2

1.4

1.6

1.8

0.6

0.001

1

0.01

0.1

10

0.001

1

0.01

0.1

10

V

CE

=10V

I

+

-C

ol

lec

tor Cu

rr

ent

(A

)

10

1

0.1

Safe Operating Area

V

CE

- Collector Emitter Voltage (V

)

0.1

10

100

1s

DC

100ms

10ms

100

µ

s

1ms

1

0.01

3 - 107