Diodes FCX1051A - Manual (Page 3)

FCX1051A
Issue 2 - July 2007 3 www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (@ T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base
breakdown voltage V
(BR)CBO
150 V I
C
= 100µA
Collector-emitter
breakdown voltage V
CES
150 V I
C
= 100µA
Collector-emitter
breakdown voltage V
CEO
40 V I
C
= 10mA
Collector-emitter
breakdown voltage V
CEV
150 V I
C
=100µA, V
EB
= 1V
Emitter-base
breakdown voltage V
(BR)EBO
5 V I
E
= 100µA
Collector cut-off
current I
CBO
0.3 10 nA V
CB
= 120V
Emitter cut-off current I
EBO
0.3 10 nA V
EB
= 4V
Collector emitter cut-
off current I
CES
0.3 10 nA V
CES
= 120V
Collector-emitter
saturation voltage V
CE(sat)
17 25 mV I
C
= 0.2A, I
B
= 10mA (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width=300 ␮s. Duty cycle Յ2%.
85 120 mV I
C
= 1A, I
B
= 10mA (*)
140 180 mV I
C
= 2A, I
B
= 20mA (*)
170 250 mV I
C
= 3A, I
B
= 40mA (*)
250 340 mV I
C
= 5A, I
B
= 100mA (*)
Base-emitter saturation
voltage V
BE(sat)
880 1000 mV I
C
= 3A, I
B
= 40mA (*)
Base-emitter turn-on
voltage V
BE(on)
840 950 mV I
C
= 3A, V
CE
= 2V (*)
Static forward current
transfer ratio h
FE
290 440 1200 I
C
= 10mA, V
CE
= 2V (*)
270 450 I
C
= 1A, V
CE
= 2V (*)
270 360 I
C
= 3A, V
CE
= 2V (*)
130 220 I
C
= 5A, V
CE
= 2V (*)
40 55 I
C
= 10A, V
CE
= 2V (*)
Transition frequency f
T
155 MHz I
C
= 50mA, V
CE
= 10V
f = 100MHz
Output capacitance C
obo
27 40 pF V
CB
= 10V, f = 1MHz
Switching times t
on
220 ns I
C
= 3A, I
B
= 30mA, V
CC
= 10V
t
off
540 ns I
C
= 3A, I
B
= 30mA, V
CC
= 10V