Diodes DXT3904 - Manual (Page 2)

Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V
(BR)CBO
60 ⎯ V I
C
= 10 μA, I
E
= 0
Collector-Emitter Breakdown Voltage V
(BR)CEO
40 ⎯ V I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage V
(BR)EBO
6.0 ⎯ V I
E
= 10
μA, I
C
= 0
Collector Cutoff Current I
CEX
⎯ 50 nA V
CE
= 30V, V
EB(OFF)
= 3.0V
Base Cutoff Current I
BL
⎯ 50 nA V
CE
= 30V, V
EB(OFF)
= 3.0V
ON CHARACTERISTICS (Note 4)
DC Current Gain h
FE
40
70
100
60
30
⎯
⎯
300
⎯
⎯
⎯
I
C
= 100 μA, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I C = 50mA, V CE = 1.0V
I
C
= 100mA, V
CE
= 1.0V
Collector-Emitter Saturation Voltage V
CE(SAT)
⎯
0.20
0.30
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage V BE(SAT)
0.65
⎯
0.85
0.95
V
I C = 10mA, I B = 1.0mA
I C = 50mA, I B = 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯ 4.0 pF V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance C
ibo
⎯ 8.0 pF V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Input Impedance h
ie
1.0 10 k Ω
Voltage Feedback Ratio h
re
0.5 8.0 x 10 -4
Small Signal Current Gain h fe
100 400 ⎯
Output Admittance h
oe
1.0 40 μS
V
CE
= 10V, I
C
= 1.0mA, f = 1.0kHz
Current Gain-Bandwidth Product f
T
300 ⎯ MHz V
CE
= 20V, I
C
= 10mA, f = 100MHz
Noise Figure NF ⎯ 5.0 dB
V CE = 5.0V, I C = 100
μA,
R S = 1.0k
Ω, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
t
d
⎯ 35 ns
Rise Time t
r
⎯ 35 ns
V
CC
= 3.0V, I
C
= 10mA,
V BE(off) = -0.5V, I B1 = 1.0mA
Storage Time t
s
⎯ 200 ns
Fall Time t
f
⎯ 50 ns
V
CC
= 3.0V, I
C
= 10mA,
I
B1
= I
B2
= 1.0mA
NEW PROD
UC
T
Notes: 4. Measured under pulsed condition. Pulse width = 300 μs. Duty cycle ≤2%.
0
0.2
0.4
25 50 75 100 125 150
P
,
P
O
WE
R
DIS
S
IP
A
T
IO
N (
W
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs.
Ambient Temperature (Note 3)
A
0.6
0.8
1.0
0
DS31141 Rev. 3 - 2 2 of 4
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DXT3904
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