Diodes DSS5540X - Manual (Page 2)

DSS5540X
Document number: DS31653 Rev. 2 - 2
2 of 5
www.diodes.com
October 2010
© Diodes Incorporated
DSS5540X
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
-40 V
Collector-Emitter Voltage V
CEO
-40 V
Emitter-Base Voltage V
EBO
-6 V
Peak Pulse Collector Current I
CM
-10 A
Repetitive Peak Pulse Collector Current (Note 4) I
CRP
-5 A
Continuous Collector Current I
C
-4 A
Peak Pulse Base Current I BM
-2 A
Continuous Base Current I
B
-1 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) @ T A = 25°C P D
0.9 W
Thermal Resistance, Junction to Ambient Air (Note 5) @ T
A
= 25°C R θJA 139 °C/W
Power Dissipation (Note 6) @ T
A
= 25°C P
D
2 W
Thermal Resistance, Junction to Ambient Air (Note 6) @ T
A
= 25°C R θJA 62.5 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Notes: 4. Pulse width ≤ 10ms; Duty cycle ≤ 0.2
5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Device mounted on FR-4 PCB with 1inch
2 copper pad layout.
0
0.4
0.8
1.2
2.4
0 50 100 150 200
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 1 Power Dissipation vs. Ambient Temperature
P
,
P
O
WE
R
DI
S
S
IP
A
T
IO
N (
W
)
D
Note 6
Note 5
1.6
2.0
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000
Fig. 2 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.001
0.01
0.1
1
r(t
),
T
R
ANS
IEN
T
T
H
E
R
MA
L
R
ES
IS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
1 2
θ
R (t) = r(t) * θJA R
R = 135°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.5
D = 0.3
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.1