Diodes DSS5240Y - Manual (Page 2)

DSS5240Y
Document number: DS31683 Rev. 2 - 2
2 of 6
www.diodes.com
October 2010
© Diodes Incorporated
DSS5240Y
Maximum Ratings
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
-40 V
Collector-Emitter Voltage V
CEO
-40 V
Emitter-Base Voltage V EBO
-5 V
Collector Current - Continuous I
C
-2 A
Peak Pulse Collector Current I
CM
-3 A
Base Current (DC) I
B
-300 mA
Peak Base Current I
BM
-1 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) @ T
A
= 25 °C P
D
625 mW
Thermal Resistance, Junction to Ambient (Note 4) @ T A = 25
°C
R θJA 200 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout.
0
0.2
0.4
0.6
0.8
0 50 100 150 200
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 4)
P
,
P
O
WE
R
DI
SS
IP
A
T
IO
N (
W
)
D
R C/W θJA
° = 200
0.1 1 10 100
V , COLLECTOR EMITTER VOLTAGE (V)
Fig. 2 Safe Operating Area
CE
0.001
0.01
0.1
1
I,
C
O
LL
E
C
T
O
R
C
U
R
R
EN
T
(A
)
C
10
Pw = 100µs
0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000 100,000
Fig. 3 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.001
0.01
0.1
1
r(t
),
T
R
ANS
IEN
T
T
H
E
R
MA
L
R
ESI
S
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
1 2
θ
R (t) = r(t) * θJA R
R = 177°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.5
D = 0.3
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.1