Diodes DSS4240T - Manual (Page 2)

DSS4240T
Document number: DS31623 Rev. 4 - 2
2 of 5
www.diodes.com
November 2011
© Diodes Incorporated
DSS4240T
NEW PROD
UC
T
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V CBO
40 V
Collector-Emitter Voltage V
CEO
40 V
Emitter-Base Voltage V
EBO
5 V
Peak Pulse Collector Current I CM
3 A
Continuous Collector Current I
C
2 A
Peak Base Current I
BM
0.3 A
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 4) P D
600 mW
Thermal Resistance, Junction to Ambient Air (Note 4) R θJA 209 °C/W
Thermal Resistance, Junction to Lead (Note 5) R θJC 74.95 °C/W
Operating and Storage Temperature Range T J , T STG
-55 to +150 °C
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV CBO
40 ⎯ ⎯ V I C = 100
μA
Collector-Emitter Breakdown Voltage (Note 6) BV
CEO
40 ⎯ ⎯ V I
C
= 10mA
Emitter-Base Breakdown Voltage BV
EBO
5 ⎯ ⎯ V I
E
= 100 μA
Collector-Base Cutoff Current I
CBO
⎯ ⎯ 100 nA V
CB = 30V, I E = 0
⎯ ⎯ 50 μA V
CB
= 30V, I
E
= 0, T
A
= 150°C
Emitter-Base Cutoff Current I
EBO
⎯ ⎯ 100 nA V
EB
= 4V, I
C
= 0
ON CHARACTERISTICS (Note 6)
DC Current Gain h
FE
350 ⎯ ⎯
⎯
V
CE
= 2V, I
C
= 0.1A
300 ⎯ ⎯ V
CE
= 2V, I
C
= 0.5A
300 ⎯ ⎯
V CE = 2V, I C = 1A
150 ⎯ ⎯
V
CE
= 2V, I
C
= 2A
Collector-Emitter Saturation Voltage V
CE(sat)
⎯ ⎯ 70
mV
I
C
= 100mA, I
B
= 1mA
⎯ 30 100 I
C
= 500mA, I
B
= 50mA
⎯ ⎯ 180 I
C
= 750mA, I
B
= 15mA
⎯ ⎯ 180 I
C
= 1A, I
B
= 50mA
⎯ ⎯ 320 I
C
= 2A, I
B
= 200mA
Equivalent On-Resistance R CE(sat)
⎯ 60 200 m
Ω I
C = 500mA, I B = 50mA
Base-Emitter Saturation Voltage V
BE(sat)
⎯ ⎯ 1.1 V I
C
= 2A, I
B
= 200mA
Base-Emitter Turn-on Voltage V
BE(on)
⎯ ⎯ 0.75 V V
CE
= 2V, I
C
= 100mA
SMALL SIGNAL CHARACTERISTICS
Transition Frequency f
T
100 ⎯ ⎯ MHz
V
CE
= 10V, I
C
= 100mA,
f = 100MHz
Output Capacitance C
ob
⎯ ⎯ 20 pF V
CB
= 10V, f = 1MHz
Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout.
5. Thermal resistance from junction to solder-point (at the end of the collector lead).
6. Measured under pulsed conditions. Pulse width = 300 μs. Duty cycle ≤ 2%.