Diodes DP0150BDJ - Manual

DP0150ADJ / DP0150BDJ
Document number: DS31485 Rev. 3 - 2
1 of 4
www.diodes.com
April 2009
© Diodes Incorporated
DP0150ADJ / DP0150BDJ
NEW PROD
UC
T
DUAL PNP SURFACE MOUNT TRANSISTOR
Features
•
Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
•
Lead Free By Design/RoHS Compliant (Note 1)
•
"Green" Device (Note 2)
• Ultra Small Package
Mechanical Data
• Case:
SOT-963
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
•
Ordering Information: See Page 3
•
Weight: 0.0027 grams (approximate)
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V CBO
-50 V
Collector-Emitter Voltage V
CEO
-50 V
Emitter-Base Voltage V
EBO
-5 V
Collector Current - Continuous I C
-100 mA
Base Current I
B
-30 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) P
D
300 mW
Thermal Resistance, Junction to Ambient (Note 3) R θJA 417 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V(
BR)CBO
-50 — — V I
C
= -10
μA, I
E
= 0
Collector-Emitter Breakdown Voltage V(
BR)CEO
-50 — — V I
C
= -1mA, I
B
= 0
Emitter-Base Breakdown Voltage V( BR)EBO
-5 — — V I E = -10
μA, I
C = 0
Collector Cut-Off Current I CBO
— — -0.1 μA
V CB = -50V, I E = 0
Emitter Cut-Off Current I EBO
— — -0.1 μA
V EB = -5V, I C = 0
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
V CE(SAT)
— -0.15 -0.3 V I C = -100mA, I B = -10mA
DC Current Gain DP0150ADJ
DP0150BDJ
h
FE
120 — 240
— V
CE
= -6V, I
C
= -2mA
200 — 400
SMALL SIGNAL CHARACTERISTICS
Transition Frequency f
T
80 — — MHz
V
CE
= -10V, I
E
= 1mA
f = 30MHz
Output Capactiance C
ob
— 1.6 — pF
V
CB
= -10V, I
E
= 0,
f = 1MHz
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle
≤2%
Device Schematic Top View
SOT-963
6
Q1 Q2
5 4
3 1 2
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